BUZ90-E3046 datasheet, PDF - EEWORLD Datasheet

BUZ90-E3046: DescriptionPower Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size189KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BUZ90-E3046 Overview

Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	320 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	4.5 A
Maximum drain-source on-resistance	1.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	18 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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