Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | compliant |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 1.1 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 500 V |
| Maximum drain current (ID) | 4.5 A |
| Maximum drain-source on-resistance | 1.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AA |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 75 W |
| Maximum pulsed drain current (IDM) | 18 A |
| Certification status | Not Qualified |
| Guideline | MILITARY STANDARD (USA) |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 110 ns |
| Maximum opening time (tons) | 70 ns |
| Base Number Matches | 1 |
| 2N6762PBF | 2N6760PBF | 2N6756PBF | 2N6758PBF | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
| Is it lead-free? | Lead free | Lead free | Lead free | Lead free |
| Is it Rohs certified? | conform to | conform to | conform to | conform to |
| Maker | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| package instruction | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| Other features | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 1.1 mJ | 1.7 mJ | 75 mJ | 54 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 500 V | 400 V | 100 V | 200 V |
| Maximum drain current (ID) | 4.5 A | 5.5 A | 14 A | 9 A |
| Maximum drain-source on-resistance | 1.5 Ω | 1 Ω | 0.18 Ω | 0.4 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AA | TO-204AA | TO-204AA | TO-204AA |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 75 W | 75 W | 75 W | 75 W |
| Maximum pulsed drain current (IDM) | 18 A | 22 A | 56 A | 36 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Guideline | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) |
| surface mount | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | 40 | 40 | 40 | 40 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 110 ns | 115 ns | 105 ns | 100 ns |
| Maximum opening time (tons) | 70 ns | 70 ns | 115 ns | 115 ns |
| Base Number Matches | 1 | 1 | 1 | - |
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