Transistor
| Parameter Name | Attribute value |
| Maker | Mitsubishi |
| package instruction | , |
| Reach Compliance Code | unknown |
| Maximum drain current (Abs) (ID) | 2.8 A |
| FET technology | METAL SEMICONDUCTOR |
| Maximum operating temperature | 175 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 19 W |
| Base Number Matches | 1 |