J.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
Li
ne,
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
DARLINGTON COPLEMENTARY
SILICON POWER TRANSISTORS
...designed for general-purpose amplifier and low speed switching
applications
FEATURES:
* Collector-Emitter Sustaining Vottage-
V
CR
»u«i" "*5 V (Mln) - BDXS3.BDXS4
= 60 V (Mln) - BDX53A.BDX54A
= 80 V (Mln) - BDX53B.BOX54B
= 100 V(Min) - BDX53C.BDX54C
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
NPN
BDX53
PNP
BDX54
BDX53A BDX54A
BDX53B BDX54B
BDX53C BDXS4C
8 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
45-100 VOLTS
60 WATTS
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak
Base Current
Total Power Dissipation
eT
c
=25°C
Derate above 25°C
Symbol BDXS3 BDXS3A BDXS3B BDXS3C
BDX64 BDX84A BDX54B BDXS4C
Veto
Vcao
VEBO
'c
'CM
IB
PD
45
45
60
60
5.0
8.0
12
0.2
60
0.48
-65
to
+150
80
80
100
100
Unit
V
V
V
A
A
TO-220
W
W/°C
°C
Operating and Storage Junction TJ-TSTO
Temperature Range
THERMAL CHARACTERISTICS
Ch airflctttriSuc
Thermal Resistance Junction to Case
Symbol
Rejc
Max
2.08
Unit
°C/W
PIN 1.1
2- COLLECTOR
4.COLLECTOR(CASB)
DIM
FIGURE-1 POWER DERATING
80
70
A
B
C
0
E
F
G
H
1
J
K
L
M
O
MILLIMETERS
MIN
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
MAX
15.31
1042
6.52
14.62
4.07
3.66
1.36
0.96
4.86
1.38
297
0.55
258
3.90
60
50
40
30
* 10
25
50
T
c
,
75
100
125
190
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BDX53,A,B,C NPN
I
BDX54,A,B,C PNP
ELECTRICAL CHARACTERISTICS ( T
c
» 25°C
unless otherwise
CharMtteristfc
OFF CHARACTERISTICS
Collector-Emitter Sustaining Vortafle(1)
( l
c
= 100 mA, l_- 0 )
BDX53, BDXS4
BDX53A, BDX54A
BDX53B, BDX54B
BDX53C, BDX54C
VCEOOU*)
46
60
80
100
V
noted )
Mln
Max
Unit
Symbol
Collector Cutoff Current
( V
C1
- 22 V, I - 0 )
.
{ V
ci
= 30 V, I - 0 )
.
( V
C1
= 40 V, l,» 0 )
( V
el
= 50 V, l»= 0 )
Collector-Base Cutoff Current
(V
CB
- Rated V,,., I^O)
Emitter-Base Cutoff Current
(V
H
»5.0V.I
C
=0)
ON CHARACTERISTICS (1)
DC Current Gain
(I
C
-3.0A,V
OI
-3,OV)
Collector-Emitter Saturation Voltag
(I
C
«3.0A, I - 12mA)
,
Base-Emitter Saturation Voltage
(I
C
=3.0A, I
B
= 12mA)
Diode Forward-Voltage
(I
F
=3.0A)
BDXS3, BDX54
BDX53A, BDX54A
BDX53B, BDX54B
BDX53C, BDX54C
'ceo
mA
0.5
0.5
0.5
0.5
uA
200
mA
2.0
'ceo
IEBO
hFE
750
VcE,-q
V
2.0
V
2.5
V
2.5
V
BE(«M)
VF
(1) Pulse Test Pulse Width =300 us, Duty Cycle £ 2.0%
INTERNAL SCHEMATIC DIAGRAM
BDX54 Series PNP
L
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