PRELIMINARY
MTS1512K8CxxSJ2
4Mb Monolithic SRAM
PIN DIAGRAM
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
4Mb, 512K x 8, Asynchronous SRAM
Memory Array
AVAILABILITY:
DSCC SMD 5962-95600
QML-Q Compliant
Mil 883 Compliant
FEATURES:
High Speed, Asynchronous operation
Fully Static, No Clocks required
Center Power & Ground for improved noise
immunity
Easy Memory Array expansion with use of Chip
Select (CS\) and Output Enable (OE\)
All Inputs/Outputs are TTL compatible
Low Power with Data Retention Functionality
available in our MTCS1512K8C-L &
MTCS1512K8C-U product groupings
Product Access Speed Options:
o
12, 15, 17, 20, 25, 35 and 45ns
Package Option:
o
36LD-CSOJ
FUNCTIONAL DESCRIPTION
The MTS1512K8C is a high-performance CMOS Static
Random Access Memory (SRAM), organized as 512K
words by 8-bits wide, containing a total density of 512K
bytes. Memory expansion is easily achieved through
use of the Chip-Select (CS\) and Output Enable (OE\)
control inputs along with the tri-state output drivers.
Writing to the device is accomplished by driving CS\ and
WE\ LOW. Data on the eight IO pins (IO0-IO7) is then
written into the addressed location specified on the
Address Input pins (A0-A18).
Reading from the MTS1512K8C is accomplished by
driving Chip Select (CS\) and Output Enable (OE\) LOW,
while forcing Write Enable (WE\) HIGH. Under these
stimulus conditions, the contents of the addressed
memory location (A0-A18) will be available on the
Output pins (IO0-IO7).
The MTS1512K8C is placed into an inactive, High-
Impedance state when the device has been de-selected
by driving Chip-Select (CS\) HIGH. The eight Input-
Output lines (IO0-IO7) are also in a High-Impedance
state when the MTS1512K8C is placed into a WRITE
operation by driving Chip-Select (CS\) and Write Enable
(WE\) LOW.
MTS1512K8C - Rev 1.1 - 07/12
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
SIGNAL NAME
A0
A1
A2
A3
A4
CE\
IO 0
IO 1
VCC
VSS
IO 2
IO 3
WE\
A5
A6
A7
A8
A9
PIN
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
SIGNAL NAME
NC
A18
A17
A16
A15
OE\
IO 7
IO 6
VSS
VCC
IO 5
IO 4
A14
A13
A12
A11
A10
NC
FUNCTIONAL BLOCK
DATE CODE
LOT CODE
MTS1512K8CssLSJ2x
INPUT BUFFER
IO 0
IO 1
ROW DECODE
SENSE AMP
512K x 8
Asynchronous
SRAM
ARRAY
2048 Rows
2048 Columns
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
CE\
WE\
IO 2
IO 3
IO 4
IO 5
POWER
DOWN
COLUMN DECODE
IO 6
IO 7
OE\
MAXIMUM RATINGS
PARAMETER
Operating Temperature
Storage Temperature
Supply Voltage Relative to GND
DC Voltage applied to Outputs in
High-Z
DC Input Voltage
SYMBOL
T
A
T
STG
V
S
V
OZG
V
G
LIMIT
-55 to +125
-65 to 150
-0.5 to VCC+0.5
-0.5 to VCC+0.5
-0.5 to VCC+0.5
UNITS
˚C
˚C
V
V
V
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
A11
A12
A13
A14
A15
A16
A17
A18
PRELIMINARY
MTS1512K8CxxSJ2
4Mb Monolithic SRAM
AC SWITCHING CHARACTERISTICS
READ
12ns
MTC1512K8C12
15ns
MTC1512K8C15
17ns
MTS1512K8C20
20ns
MTS1512K8C25
PARAMETER
VCC to First Access
READ Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable Access Time
Output Enable to Output in Low-Z
Output Disable to Ouput in High-Z
Chip Enable to Power-Up
Chip Disable to Power-Down
SYMBOL
t
POWER
t
RC
t
AC
t
ACS
t
OH
t
CLZ
t
CHZ
t
OE
t
OLZ
t
OHZ
t
PU
t
PD
MIN
100
12
-
-
3
3
0
-
0
-
0
-
MAX
-
-
12
12
-
-
6
6
-
6
-
12
MIN
100
15
-
-
3
3
0
-
0
-
0
-
MAX
-
-
15
15
-
-
7
7
-
7
-
15
MIN
100
20
-
-
3
3
0
-
0
-
0
-
MAX
-
-
17
17
-
-
8
8
-
8
-
17
MIN
100
25
-
-
3
3
0
-
0
-
0
-
MAX
-
-
20
20
-
-
8
10
-
8
-
20
UNITS NOTE(S)
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4,7
4,6,7
4,7
4,6,7
15
25ns
MTS1512K8C25
35ns
MTS1512K8C35
45ns
MTS1512K8C45
PARAMETER
VCC to First Access
READ Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable Access Time
Output Enable to Output in Low-Z
Output Disable to Ouput in High-Z
Chip Enable to Power-Up
Chip Disable to Power-Down
SYMBOL
t
POWER
t
RC
t
AC
t
ACS
t
OH
t
CLZ
t
CHZ
t
OE
t
OLZ
t
OHZ
t
PU
t
PD
MIN
100
25
-
-
3
3
0
-
0
-
0
-
MAX
-
-
25
25
-
-
10
12
-
10
-
25
MIN
100
15
-
-
3
3
0
-
0
-
0
-
MAX
-
-
15
15
-
-
12
15
-
12
-
35
MIN
100
20
-
-
3
3
0
-
0
-
0
-
MAX
-
-
20
20
-
-
15
22
-
15
-
45
UNITS NOTE(S)
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4,7
4,6,7
4,7
4,6,7
15
MTS1512K8C - Rev 1.1 - 07/12
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
PRELIMINARY
MTS1512K8CxxSJ2
4Mb Monolithic SRAM
WRITE
12ns
MTS1512K8C12
15ns
MTS1512K8C15
17ns
MTS1512K8C20
20ns
MTS1512K8C25
PARAMETER
WRITE Cycle Time
Chip Enable to End of WRITE
Address Setup Time
Address Hold from End of WRITE
Address Valid to End of WRITE
WRITE Pulse Width
Data Setup Time
Data Hold Time
WRITE Disable to Output in Low-Z
WRITE Enable to Output in High-Z
SYMBOL
t
WC
t
CW
t
AS
t
AH
t
AW
t
WP
t
DS
t
DH
t
WLZ
t
WHZ
MIN
12
8
0
0
8
8
7
0
3
-
MAX
-
-
-
-
-
-
-
-
-
5
MIN
15
10
0
0
10
10
8
0
4
-
MAX
-
-
-
-
-
-
-
-
-
7
MIN
17
12
0
0
12
12
9
0
4
-
MAX
-
-
-
-
-
-
-
-
-
8
MIN
20
14
0
0
14
14
10
0
5
-
MAX
-
-
-
-
-
-
-
-
-
8
UNITS NOTE(S)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4,6,7
4,6,7
25ns
MTS1512K8C25
35ns
MTS1512K8C35
45ns
MTS1512K8C45
PARAMETER
WRITE Cycle Time
Chip Enable to End of WRITE
Address Setup Time
Address Hold from End of WRITE
Address Valid to End of WRITE
WRITE Pulse Width
Data Setup Time
Data Hold Time
WRITE Disable to Output in Low-Z
WRITE Enable to Output in High-Z
SYMBOL
t
WC
t
CW
t
AS
t
AH
t
AW
t
WP
t
DS
t
DH
t
WLZ
t
WHZ
MIN
25
16
0
0
16
16
10
0
5
-
MAX
-
-
-
-
-
-
-
-
-
10
MIN
35
18
0
0
18
18
12
0
5
-
MAX
-
-
-
-
-
-
-
-
-
10
MIN
45
24
0
0
24
24
15
0
5
-
MAX
-
-
-
-
-
-
-
-
-
12
UNITS NOTE(S)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4,6,7
4,6,7
MTS1512K8C - Rev 1.1 - 07/12
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
MEMS sensors
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