BAR50...
Silicon PIN Diodes
•
Current-controlled RF resistor
for switching and attenuating applications
•
Frequency range above 10 MHz up to 6 GHz
•
Especially useful as antenna switch
in mobile communication
•
Very low capacitance at zero volt reverse bias
at freuencies above 1 GHz (typ. 0.15 pF)
•
Low forward resistance
•
Very low harmonic distortion
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
1)
BAR50-02L
BAR50-02V
BAR50-03W
Type
BAR50-02L*
BAR50-02V
BAR50-03W
1
*BAR50-02L
Package
TSLP-2-1
SC79
SOD323
Configuration
single, leadless
single
single
L
S
(nH)
0.4
0.6
1.8
Marking
AB
a
blue A
is not qualified according AEC Q101
1
2011-07-18
BAR50...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR50-02L,
T
S
≤
130°C
BAR50-02V,
T
S
≤
120°C
BAR50-03W,
T
S
≤
115°C
Junction temperature
Operating temperature range
Storage temperature
T
j
T
op
T
stg
Symbol
V
R
I
F
P
tot
250
250
250
150
-55 ... 125
-55 ... 150
°C
Value
50
100
Unit
V
mA
mW
Thermal Resistance
Parameter
Junction - soldering point
1)
BAR50-02L
BAR50-02V
BAR50-03W
Symbol
R
thJS
Value
≤
80
≤
120
≤
140
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Reverse current
V
R
= 50 V
Forward voltage
I
F
= 50 mA
1
For
Unit
max.
50
1.1
nA
V
typ.
-
0.95
I
R
V
F
-
-
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2011-07-18
BAR50...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 5 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1...1.8 GHz, BAR50-02L
V
R
= 0 V,
f
= 1...1.8 GHz, all other
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
I
F
= 0.5 mA,
f
= 100 MHz
I
F
= 1 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
Insertion loss
1)
I
F
= 3 mA,
f
= 1.8 GHz
I
F
= 5 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
Isolation
1)
V
R
= 0 V,
f
= 0.9 GHz
V
R
= 0 V,
f
= 1.8 GHz
V
R
= 0 V,
f
= 2.45 GHz
V
R
= 0 V,
f
= 5.6 GHz
1
BAR50-02L
Symbol
min.
C
T
-
-
-
-
-
R
P
-
-
-
r
f
-
-
-
τ
rr
Values
typ.
max.
Unit
pF
0.24
0.2
0.2
0.1
0.15
25
6
5
25
16.5
3
1100
0.5
0.4
-
-
-
k
Ω
-
-
-
Ω
40
25
4.5
-
ns
-
W
I
I
L
-
-
-
-
56
0.56
0.4
0.27
24.5
20
18
12
-
-
-
-
-
-
-
-
µm
dB
I
SO
-
-
-
-
in series configuration,
Z
= 50
Ω
3
2011-07-18
BAR50...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= Parameter
0.5
pF
Reverse parallel resistance
R
P
=
ƒ
(V
R
)
f
= Parameter
10
3
KOhm
0.4
10
2
100 MHz
C
T
R
p
0.35
0.3
10
1
1 GHz
1.8 GHz
0.25
1 MHz
100 MHz
1 GHz
1.8 GHz
10
0
0.2
0.15
10
-1
0
0.1
0
2
4
6
8
10
12
14
16
V
20
2
4
6
8
10
12
14
16
V
20
V
R
V
R
Forward resistance
r
f
=
ƒ
(I
F
)
f
= 100 MHz
10
4
Ohm
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
10
0
A
10
-1
10
3
10
-2
10
2
I
F
10
-3
r
f
10
1
10
-4
-40 °C
25 °C
85 °C
125 °C
10
0
10
-5
10
-1 -2
10
10
-1
10
0
10
1
mA
10
2
10
-6
0
0.2
0.4
0.6
0.8
V
1.2
I
F
V
F
4
2011-07-18
BAR50...
Forward current
I
F
=
ƒ
(T
S
)
BAR50-02L
120
mA
Forward current
I
F
=
ƒ
(T
S
)
BAR50-02V
120
mA
100
90
80
100
90
80
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
C°
150
T
S
T
S
Forward current
I
F
=
ƒ
(T
S
)
BAR50-03W
120
mA
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
BAR50-02L
10
2
100
90
80
IF
mA
R
thJS
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
C°
TS
10
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
150
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
°C
10
0
t
p
5
2011-07-18
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