FIFO, 4KX9, 120ns, Asynchronous, CMOS, PQCC32
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Maxim |
| Reach Compliance Code | not_compliant |
| Maximum access time | 120 ns |
| Maximum clock frequency (fCLK) | 7.14 MHz |
| JESD-30 code | R-PQCC-J32 |
| JESD-609 code | e0 |
| memory density | 36864 bit |
| Memory IC Type | OTHER FIFO |
| memory width | 9 |
| Number of terminals | 32 |
| word count | 4096 words |
| character code | 4000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 4KX9 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | QCCJ |
| Encapsulate equivalent code | LDCC32,.5X.6 |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.002 A |
| Maximum slew rate | 0.12 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | J BEND |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Base Number Matches | 1 |
| DS2012RN | DS2012RN-65 | DS2012RN-80 | DS2012N | |
|---|---|---|---|---|
| Description | FIFO, 4KX9, 120ns, Asynchronous, CMOS, PQCC32 | FIFO, 4KX9, 65ns, Asynchronous, CMOS, PQCC32 | FIFO, 4KX9, 80ns, Asynchronous, CMOS, PQCC32 | FIFO, 4KX9, 120ns, Asynchronous, CMOS, PDIP28, |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant |
| Maximum access time | 120 ns | 65 ns | 80 ns | 120 ns |
| Maximum clock frequency (fCLK) | 7.14 MHz | 12.5 MHz | 10 MHz | 7.14 MHz |
| JESD-30 code | R-PQCC-J32 | R-PQCC-J32 | R-PQCC-J32 | R-PDIP-T28 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| memory density | 36864 bit | 36864 bit | 36864 bit | 36864 bit |
| Memory IC Type | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO |
| memory width | 9 | 9 | 9 | 9 |
| Number of terminals | 32 | 32 | 32 | 28 |
| word count | 4096 words | 4096 words | 4096 words | 4096 words |
| character code | 4000 | 4000 | 4000 | 4000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C | 85 °C | 85 °C | 85 °C |
| Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C |
| organize | 4KX9 | 4KX9 | 4KX9 | 4KX9 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | QCCJ | QCCJ | QCCJ | DIP |
| Encapsulate equivalent code | LDCC32,.5X.6 | LDCC32,.5X.6 | LDCC32,.5X.6 | DIP28,.6 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE |
| power supply | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum standby current | 0.002 A | 0.002 A | 0.002 A | 0.002 A |
| Maximum slew rate | 0.12 mA | 0.12 mA | 0.12 mA | 0.12 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | YES | YES | YES | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | J BEND | J BEND | J BEND | THROUGH-HOLE |
| Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm |
| Terminal location | QUAD | QUAD | QUAD | DUAL |
| Base Number Matches | 1 | 1 | 1 | 1 |
| Maker | Maxim | Maxim | Maxim | - |