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30E2

Description
Silicon N Channel IGBT High Speed Power Switching
File Size148KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

30E2 Overview

Silicon N Channel IGBT High Speed Power Switching

Preliminary
Datasheet
RJP30E2DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
Trench gate technology (G5H series)
Low collector to emitter saturation voltage V
CE(sat)
= 1.7 V typ
High speed switching tf = 150 ns typ
Low leak current I
CES
= 1
μA
max
Isolated package TO-220FL
R07DS0347EJ0200
Rev.2.00
Apr 12, 2011
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
C
G
1. Gate
2. Collector
3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
10
μs,
duty cycle
1%
2. Tc = 25°C
Symbol
V
CES
V
GES
Ic
ic(peak)
Note1
Note2
P
C
θj-c
Tj
Tstg
Ratings
360
±30
35
200
25
5
150
–55 to +150
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0347EJ0200 Rev.2.00
Apr 12, 2011
Page 1 of 6
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