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DD231N24

Description
Rectifier Diode, 1 Phase, 2 Element, 261A, 2400V V(RRM), Silicon, MODULE-3
CategoryDiscrete semiconductor    diode   
File Size584KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

DD231N24 Overview

Rectifier Diode, 1 Phase, 2 Element, 261A, 2400V V(RRM), Silicon, MODULE-3

DD231N24 Parametric

Parameter NameAttribute value
MakerInfineon
Parts packaging codeMODULE
package instructionMODULE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage2400 V
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.55 V
JESD-30 codeR-XUFM-X3
Maximum non-repetitive peak forward current7500 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current261 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage2400 V
Maximum reverse current25000 µA
Reverse test voltage2400 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Base Number Matches1
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD231N
DD231N
Elektrische Eigenschaften / Electrical properties
Kenndaten
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Elektrische Eigenschaften
T
Thermische Eigenschaften
vj
= -40°C... T
vj max
V
RRM
2000
2400
2100
2500
2200 V
2600 V
2300 V
2700 V
410 A
231 A
261 A
7.500 A
6.400 A
281.000 A²s
205.000 A²s
T
vj
= +25°C... T
vj max
V
RSM
I
FRMSM
T
C
= 100°C
T
C
=
91°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FAVM
I
FSM
I²t
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
T
vj
= T
vj max
, i
F
= 800 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
, v
R
= V
RRM
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
v
F
V
(TO)
r
T
i
R
V
ISOL
max.
1,55 V
0,8 V
0,84 mΩ
max.
25 mA
3,6 kV
3,0 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module, Θ = 180° sin
pro Zweig / per arm, Θ = 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
pro Modul / per Module
pro Zweig / per arm
R
thJC
max.
max.
max.
max.
max.
max.
0,085
0,170
0,082
0,164
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
R
thCH
T
vj max
T
c op
T
stg
0,02 °C/W
0,04 °C/W
150 °C
- 40...+150 °C
- 40...+150 °C
prepared by: M.Stelte
approved by: M. Leifeld
date of publication: 2011-03-01
revision:
3.0
IFBIP D AEC / 2011-03-01, M.Stelte
A14/11
Seite/page
1/9

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Description Rectifier Diode, 1 Phase, 2 Element, 261A, 2400V V(RRM), Silicon, MODULE-3 Rectifier Diode, 1 Phase, 2 Element, 261A, 2000V V(RRM), Silicon, MODULE-3 Rectifier Diode, 1 Phase, 2 Element, 261A, 2600V V(RRM), Silicon, MODULE-3 Rectifier Diode, 1 Phase, 2 Element, 261A, 2200V V(RRM), Silicon, MODULE-3
Maker Infineon Infineon Infineon Infineon
Parts packaging code MODULE MODULE MODULE MODULE
package instruction MODULE-3 MODULE-3 MODULE-3 MODULE-3
Contacts 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 2400 V 2000 V 2600 V 2200 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.55 V 1.55 V 1.55 V 1.55 V
JESD-30 code R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3
Maximum non-repetitive peak forward current 7500 A 7500 A 7500 A 7500 A
Number of components 2 2 2 2
Phase 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Maximum output current 261 A 261 A 261 A 261 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 2400 V 2000 V 2600 V 2200 V
Maximum reverse current 25000 µA 25000 µA 25000 µA 25000 µA
Reverse test voltage 2400 V 2000 V 2600 V 2200 V
surface mount NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER
Base Number Matches 1 1 1 1
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