AP2530AGY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Fast Switching Performance
▼
Surface Mount Package
▼
RoHS Compliant & Halogen-Free
SOT-26
S2
G1
D1
D2
S1
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
G2
30V
72mΩ
3.3A
-30V
150mΩ
-2.3A
I
D
P-CH BV
DSS
R
DS(ON)
I
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface mount
applications.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
3
Rating
N-channel
30
+20
3.3
2.7
12
1.136
-55 to 150
-55 to 150
P-channel
-30
+20
-2.3
-1.8
-10
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
110
Unit
℃/W
1
201101171
Data and specifications subject to change without notice
AP2530AGY-HF
N-CH Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
o
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
4.6
-
-
2.8
1.2
1.4
5.5
6.5
10
2
200
60
40
1
Max. Units
-
72
135
3
-
1
+100
4.5
-
-
-
-
-
-
320
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=3A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=3A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=0.9A, V
GS
=0V
I
S
=3A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
15
8
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
2
AP2530AGY-HF
P-CH Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
o
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-2A
V
GS
=-4.5V, I
D
=-1A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-2A
V
DS
=-24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-2A
V
DS
=-15V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-15V
f=1.0MHz
f=1.0MHz
Min.
-30
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2.9
-
-
2.5
0.8
1.2
5.5
8
17
3
160
60
40
8
Max.
-
150
280
-3
-
-1
+100
4
-
-
-
-
-
-
260
-
-
-
Unit
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=0.9A, V
GS
=0V
I
S
=2A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
16
9
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP2530AGY-HF
N-Channel
12
10
T
A
=25 C
10
o
I
D
, Drain Current (A)
8
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
T
A
= 150
o
C
8
10V
7.0V
6.0V
5.0V
6
6
V
G
= 4.0V
3.3A
4
V
G
= 4.0V
4
2
2
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
110
1.8
I
D
=2A
100
T
A
=25 C
Normalized R
DS(ON)
o
I
D
=3A
V
G
=10V
R
DS(ON)
(m
Ω
)
90
1.4
80
70
1.0
60
3.3
2.68
13.2
1.136
-50
0
50
100
150
50
2
4
6
8
10
0.6
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
4
I
D
=1mA
1.6
3
Normalized V
GS(th)
(V)
I
S
(A)
1.2
2
T
j
=150 C
o
T
j
=25
o
C
0.8
1
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP2530AGY-HF
N-Channel
10
300
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=3A
V
DS
= 15 V
8
C (pF)
C
iss
200
6
4
100
2
C
oss
C
rss
0
0
1
2
3
4
5
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
I
D
(A)
Operation in this
area limited by
R
DS(ON)
0.1
0.1
100us
1ms
0.05
1
0.02
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 180℃/W
10ms
0.1
0.01
Single Pulse
o
T
A
=25 C
Single Pulse
100ms
1s
DC
1
10
100
0.01
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
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