AP3989R-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600V
0.68Ω
10A
S
Description
AP3989 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications. The TO-262 type provide
high blocking voltage to overcome voltage surge and sag in the toughest
power system with the best combination of fast switching,ruggedized design
and cost-effectiveness.
The TO-262 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies, DC-AC
converters and high current high speed switching circuits.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
600
+30
10
5
40
156
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.8
62
Unit
℃/W
℃/W
1
201001121
Data & specifications subject to change without notice
AP3989R-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
2
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=480V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=9A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=9A
R
G
=10Ω,V
GS
=10V
R
D
=33.3Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
4.5
-
-
-
48
10
20
16
25
70
35
355
28
Max. Units
-
0.68
4
-
100
500
+100
77
-
-
-
-
-
-
-
-
V
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=480V
,
V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
2150 3440
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=9A, V
GS
=0V
I
S
=9A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
570
9.7
Max. Units
1.5
-
-
V
ns
uC
t
rr
Q
rr
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3989R-HF
20
10
T
C
=25 C
16
o
I
D
, Drain Current (A)
12
I
D
, Drain Current (A)
10V
7.0V
6.0V
T
C
=150
o
C
8
10V
7 .0V
6 .0V
5.0V
6
8
4
5.0V
4
V
G
=4 0V
2
V
G
=4.0V
0
0
4
8
12
16
20
24
0
0
4
8
12
16
20
24
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.3
3.2
2.8
1.2
I
D
=5A
V
G
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
2.4
2
1.1
1.6
1
1.2
0.8
0.9
0.4
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.4
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
T
j
= 150
o
C
T
j
= 25
o
C
Normalized V
GS(th)
(V)
1.2
1
I
S
(A)
1
0.8
0.6
0.1
0
0.2
0.4
0.6
0.8
1
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3989R-HF
f=1.0MHz
16
3200
V
GS
, Gate to Source Voltage (V)
I
D
=9A
12
V
DS
=480V
C (pF)
2400
C
iss
1600
8
4
800
0
0
20
40
60
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Operation in this
area limited by
R
DS(ON)
10
Normalized Thermal Response (R
thjc
)
100us
0.2
I
D
(A)
0.1
0.1
1ms
1
0.05
P
DM
0.02
t
T
T
c
=25
o
C
Single Pulse
0.1
1
10
100
10ms
100ms
DC
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
京公网安备 11010802033920号
EEWORLD
