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C10T10Q

Description
SBD
File Size133KB,1 Pages
ManufacturerNI
Websitehttps://www.ni.com
Download Datasheet View All

C10T10Q Overview

SBD

10A Avg.
Item
く り 返 し ピ ー ク 逆 電 圧
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
R.M.S. Forward Current
Surge Forward Current
動 ½ 接 合 温 度 範 囲
Operating Junction Temperature Range
Storage Temperature Range
100 Volts
Symbol
V
RRM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
120
50Hz、正弦全波通電抵抗負荷
50Hz Full Sine Wave Resistive Load
SBD
Conditions
100
Tc=121℃
11.1
50Hz正弦全波,1サイクル,非くり返し
50Hz Full Sine Wave,1cycle, Non-repetitive
C10T10Q
■OUTLINE DRAWING(mm)
Unit
V
10
A
A
A
■最大定格 Maximum Ratings
−40∼+150
−40∼+150
■電気的・熱的特性 Electrical/ Thermal Characteristics
Item
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
■APPROX. NET WEIGHT:1.4g
Symbol
I
RM
V
FM
R
th(j-c)
Conditions
T
j
=25℃, V
RM
=V
RRM
,
一素子あたり 
Per Diode
T
j
=25℃, I
FM
=5A,
一素子あたり 
Per Diode
接合部½ケース間
Junction toCase
Min.
Typ.
Max.
1
0.85
3
Unit
mA
V
℃/W
■定格・特性曲線
FIG.1
FORWARD CURRENT VS. VOLTAGE
20
C10T10Q/C10T10Q-11A (per Arm)
θ
180˚
FIG.2
平 均 順 電 力 損 失 特 性
AVERAGE FORWARD POWER DISSIPATION
C10T10Q/C10T10Q-11A (Total)
RECT 180
˚
20
FIG.3
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Tj= 150
˚
C
C10T10Q/C10T10Q-11A (per Arm)
順 電 圧 特 性
CONDUCTION ANGLE
通流角
ピーク逆電流 − ピーク逆電圧特性
AVERAGE FORWARD POWER DISSIPATION (W)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
5
6
½
PEAK REVERSE CURRENT (mA)
10
8
SINE WAVE
10
4
2
Tj=25
˚
C
Tj=150
˚
C
1
(W)
5
2
(½A)
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
10
12
2
0
20
40
60
80
100
120
INSTANTANEOUS FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
PEAK REVERSE VOLTAGE (V)
瞬 時 順 電 圧 (V)
平 均 順 電 流 (A)
ピ ー ク 逆 電 圧 (V)
FIG.4
FIG.5
θ
180˚
CONDUCTION ANGLE
FIG.6
サ ー ジ 順 電 流 定 格
SURGE CURRENT RATINGS
140
120
f=50Hz,Sine Wave,Non-Repetitive,No Load
C10T10Q/C10T10Q-11A
AVERAGE REVERSE POWER DISSIPATION
2.0
C10T10Q/C10T10Q-11A (Total)
RECT 180˚
平 均 逆 電 力 損 失
通流角
12
平 均 順 電 流 − ケ ー ス 温 度 定 格
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
V
R M
= 100V
RECT 180˚
C10T10Q/C10T10Q-11A (Total)
AVERAGE FORWARD CURRENT (A)
(W)
AVERAGE REVERSE POWER DISSIPATION (W)
1.6
1.2
SINE WAVE
½
8
SURGE FORWARD CURRENT (A)
10
SINE WAVE
100
80
60
40
I FSM
0.02s
6
0.8
(A)
4
(A)
0.4
2
20
0
0.02
0
0
20
40
60
80
100
120
0
0
25
50
75
100
125
150
0.05
0.1
0.2
0.5
1
2
REVERSE VOLTAGE (V)
CASE TEMPERATURE (
˚
C)
TIME (s)
逆 電 圧 (V)
ケ ー ス 温 度 (℃)
時 間 (½)
FIG.7
接 合 容 量 特 性
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
500
Tj=2 5∞C,V m = 20m V
RM S
,f= 100 kHz ,Ty pica l V alue
C10T10Q/C10T10Q-11A (per Arm)
(½F)
JUNCTION CAPACITANCE (pF)
200
100
50
20
0.5
1
2
5
10
20
50
100
200
REVERSE VOLTAGE (V)
逆 電 圧 (V)
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