Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1651
DESCRIPTION
・With
TO-3PML package
・Built-in
damper diode
・High
breakdown voltage
・High
speed switching
APPLICATIONS
・For
color TV horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
・
ABSOLUTE MAXIMUM RATINGS AT Tc=25
℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
5
60
150
-55~150
UNIT
V
V
V
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SD1651
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A , I
B
=0
800
V
V
CEsat
Collector-emitter saturation voltage
I
C
=4A ;I
B
=0.8A
3.0
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=4A ;I
B
=0.8A
1.5
V
I
CBO
Collector cut-off current
V
CB
=800V; I
E
=0
10
μA
I
CES
Collector cut-off current
V
CES
=1500V; R
BE
=∞
1.0
mA
I
EBO
Emitter cut-off current
V
EB
=4V; I
C
=0
40
130
mA
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
8
f
T
Transition frequency
I
C
=1A ; V
CE
=10V
3
MHz
V
F
Diode forward voltage
I
F
=5A
2.0
V
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1651
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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