PD- 94024A
IRF7424
HEXFET
®
Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
V
DSS
-30V
R
DS(on)
max (mΩ)
Ω)
13.5@V
GS
= -10V
22@V
GS
= -4.5V
I
D
-11A
-8.8A
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
S
1
8
7
A
D
D
D
D
S
S
G
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-11
-9.3
-47
2.5
1.6
20
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
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1
3/29/01
IRF7424
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-30
–––
–––
–––
-1.0
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.019
–––
–––
–––
–––
–––
–––
–––
–––
75
14
12
15
23
150
76
4030
580
410
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
13.5
V
GS
= -10V, I
D
= -11A
mΩ
22
V
GS
= -4.5V, I
D
= -8.8A
-2.5
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -11A
-15
V
DS
= -24V, V
GS
= 0V
µA
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
110
I
D
= -11A
21
nC V
DS
= -15V
18
V
GS
= -10V
–––
V
DD
= -15V
–––
I
D
= -1.0A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= -10V
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
40
47
-2.5
A
-47
-1.2
60
71
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.5A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF7424
1000
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
TOP
1000
-I
D
, Drain-to-Source Current (A)
100
10
-I
D
, Drain-to-Source Current (A)
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
TOP
100
10
1
-2.5V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
-2.5V
1
0.1
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 150
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -11A
-I
D
, Drain-to-Source Current (A)
1.5
1.0
T
J
= 25
°
C
1
0.5
0.1
2.5
V DS = -15V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
5.0
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7424
6000
5000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
12
I
D
=
-11A
V
DS
=-24V
V
DS
=-15V
10
C, Capacitance (pF)
C
iss
4000
8
3000
6
2000
4
1000
C
oss
C
rss
2
0
1
10
100
0
0
20
40
60
80
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
SD
, Reverse Drain Current (A)
10
-I
D
, Drain Current (A)
I
T
J
= 150
°
C
100us
10
1ms
1
T
J
= 25
°
C
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1
0.1
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7424
12
V
DS
10
R
D
V
GS
R
G
D.U.T.
+
-I
D
, Drain Current (A)
8
V
GS
6
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
4
Fig 10a.
Switching Time Test Circuit
2
V
GS
t
d(on)
t
r
t
d(off)
t
f
0
25
50
75
100
125
150
10%
T
C
, Case Temperature ( ° C)
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
DS
Fig 10b.
Switching Time Waveforms
100
D = 0.50
Thermal Response (Z
thJA
)
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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V
DD
5
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