PD - 95326
IRG4IBC30WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Benefits
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• 2.5kV, 60s insulation voltage
Industry-benchmark
switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Industry standard Isolated TO-220 Fullpak
TM
outline
• Lead-Free
C
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.1V
@V
GE
= 15V, I
C
= 12 A
n-channel
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-220 FULLP
AK
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
17
8.4
92
92
± 20
180
45
18
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
2.0 (0.07)
Max.
2.8
65
–––
Units
°C/W
g (oz)
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1
6/1/04
IRG4IBC30WPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 —
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
18
—
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —
0.34
—
2.1
Collector-to-Emitter Saturation Voltage
— 2.45
V
CE(ON)
— 1.95
V
GE(th)
Gate Threshold Voltage
3.0
—
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
—
-11
g
fe
Forward Transconductance
11
16
—
—
I
CES
Zero Gate Voltage Collector Current
—
—
—
—
I
GES
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V
V
GE
= 0V, I
C
= 1.0A
—
V/°C V
GE
= 0V, I
C
= 1.0mA
2.7
I
C
= 12A
V
GE
= 15V
—
I
C
= 23A
See Fig.2, 5
V
—
I
C
= 12A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
= 100 V, I
C
= 12A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
51
7.6
18
25
16
99
67
0.13
0.13
0.26
24
17
150
150
0.55
7.5
980
71
18
Max. Units
Conditions
76
I
C
= 12A
11
nC V
CC
= 400V
See Fig.8
27
V
GE
= 15V
—
—
T
J
= 25°C
ns
150
I
C
= 12A, V
CC
= 480V
100
V
GE
= 15V, R
G
= 23Ω
—
Energy losses include "tail"
—
mJ See Fig. 9, 10, 13, 14
0.35
—
T
J
= 150°C,
—
I
C
= 12A, V
CC
= 480V
ns
—
V
GE
= 15V, R
G
= 23Ω
—
Energy losses include "tail"
—
mJ See Fig. 11,13, 14
—
nH Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 23Ω,
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
t = 60s, f = 60Hz
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4IBC30WPbF
25
For both:
Triangular wave:
20
Load Current (A)
Duty cycle: 50%
TJ = 125°C
Tsink 90°C
=
Gate drive as specified
Power Dissipation = 10.6W
Clamp voltage:
80% of rated
15
Square wave:
60% of rated
voltage
10
5
Ideal diodes
0
0.1
1
10
100
A
1000
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
°
C
10
T
J
= 150
°
C
10
T
J
= 25
°
C
T
J
= 25
°
C
1
1
V
GE
= 15V
20µs PULSE WIDTH
1
10
0.1
5.0
V
CC
= 50V
5µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
11.0
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4IBC30WPbF
20
3.0
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 24 A
Maximum DC Collector Current(A)
15
2.5
10
I
C
= 12 A
2.0
I
C
=
6A
5
0
25
50
75
100
125
150
1.5
-60 -40 -20
0
20 40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs.
Temperature
Case
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC30WPbF
2000
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 12A
16
C, Capacitance (pF)
1500
Cies
1000
12
8
500
Coes
Cres
4
0
0
1
10
100
0
10
20
30
40
50
60
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.5
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
0.4
I
C
= 12A
10
23
Ω
R
G
= Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
24
A
1
0.3
I
C
=
12
A
I
C
=
0.1
6
A
0.2
0.1
10
0.0
0
10
20
30
40
50
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
R
, Gate Resistance (Ohm)
G
, Gate Resistance
(Ω)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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