MJD117
MJD117
D-PAK for Surface Mount Applications
•
•
•
•
•
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP117
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Value
- 100
- 100
-5
-2
-4
- 50
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
mA
W
W
°C
°C
R1
R2
E
B
Equivalent Circuit
C
R
1
≅
10
k
Ω
R
2
≅
0.6
k
Ω
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
CBO
I
EBO
h
FE
Parameter
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
Test Condition
I
C
= - 30mA, I
B
= 0
V
CE
= - 50V, I
B
= 0
V
CB
= - 100V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 3V, V
EB
= - 0.5A
V
CE
= - 3V, V
EB
= - 2A
V
CE
= - 3V, I
C
= - 4A
I
C
= -2A, I
B
= - 8mA
I
C
= - 4A, I
B
= - 40mA
I
C
= - 4A, I
B
= - 40mA
V
CE
= - 3A, I
C
= - 2A
V
CE
= -10V, I
C
= - 0.75A
V
CB
= - 10V, I
E
= 0
f= 0.1MHz
25
200
500
1000
200
Min.
- 100
Max.
- 20
- 20
-2
12K
-2
-3
-4
- 2.8
V
V
V
V
MHz
pF
Units
V
µA
µA
mA
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD117
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10000
-10
V
CE
= - 3V
I
C
= 250 I
B
h
FE
, DC CURRENT GAIN
V
BE
(sat)
-1
1000
V
CE
(sat)
100
-0.1
10
-0.01
-0.1
-1
-10
-0.01
-0.01
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
10
V
CC
= - 30V
I
C
=250I
B
V
CC
=30V
I
C
=250I
B
t
STG
,t
F
[
µ
s], TURN OFF TIME
t
R
, t
D
(
µ
s), TURN ON TIME
t
STG
1
1
t
F
t
R
t
D
0.1
-0.01
0.1
-0.01
-0.1
-1
-10
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
1000
-10
s
0
µ
10
I
C
[A], COLLECTOR CURRENT
C
ob
[pF], CAPACITANCE
100
-1
DC
1
5m ms
s
10
-0.1
1
-0.01
-0.01
-0.1
-1
-10
-100
-1
-10
-100
-1000
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST
®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
京公网安备 11010802033920号
EEWORLD
