Cascadable Silicon Bipolar
MMIC Amplifiers
Technical Data
MSA-0635, -0636
Features
• Cascadable 50
Ω
Gain Block
• Low Operating Voltage:
3.5 V Typical V
d
• 3 dB Bandwidth:
DC to 0.9 GHz
• High Gain:
19.0 dB Typical at 0.5 GHz
• Low Noise Figure:
2.8 dB Typical at 0.5 GHz
• Cost Effective Ceramic
Microstrip Package
designed for use as a general
purpose 50
Ω
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0636.
35 micro-X Package
[1]
Note:
1.
Short leaded 36 package available
upon request.
Description
The MSA-0635 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
Typical Biasing Configuration
R
bias
V
CC
> 5 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 3.5 V
2
5965-9585E
6-370
MSA-0635, -0636 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
[4]
Absolute Maximum
[1]
50 mA
200 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,5]
:
θ
jc
= 155°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 6.5 mW/°C for T
C
> 169°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 16 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.1 GHz
f = 0.1 to 2.5 GHz
Units
dB
dB
GHz
Min.
19.0
Typ.
20.5
±
0.7
0.9
1.4:1
1.3:1
Max.
22.0
±
1.0
dB
dBm
dBm
psec
V
mV/°C
3.1
2.8
2.0
14.5
200
3.5
–8.0
4.0
3.9
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
6-371
MSA-0635, -0636 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 16 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Note:
.03
.02
.02
.02
.02
.04
.07
.10
.17
.24
.31
.37
.42
.46
.48
.52
–178
–177
–164
–116
–100
–89
–96
–108
–134
–160
–178
166
151
139
126
110
20.5
20.3
20.0
19.6
19.2
18.7
17.7
16.6
14.2
12.1
10.3
8.7
7.4
6.2
5.1
4.2
10.59
10.31
9.96
9.55
9.08
8.59
7.66
6.79
5.13
4.01
3.26
2.72
2.33
2.04
1.81
1.62
171
161
152
144
136
128
115
103
79
60
48
34
21
9
–3
–15
–23.4
–22.9
–22.4
–22.0
–21.8
–21.3
–20.2
–19.4
–17.2
–15.8
–15.1
–14.4
–13.9
–13.3
–12.8
–12.2
.068
.071
.076
.079
.081
.086
.098
.107
.138
.163
.175
.190
.203
.216
.229
.245
5
8
14
19
21
24
29
31
30
26
27
24
19
16
12
8
.04
.05
.06
.07
.09
.09
.10
.11
.12
.12
.12
.11
.10
.08
.08
.09
–44
–68
–87
–104
–114
–123
–140
–156
172
148
140
135
144
167
–173
–173
1.05
1.04
1.04
1.03
1.04
1.04
1.03
1.02
1.03
1.04
1.08
1.10
1.11
1.11
1.11
1.09
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
21
Gain Flat to DC
18
15
G
p
(dB)
I
d
(mA)
G
p
(dB)
25
T
C
= +125°C
T
C
= +25°C
20 T
C
= –55°C
25
0.1 GHz
0.5 GHz
20
1.0 GHz
15
2.0 GHz
10
12
9
6
3
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
15
10
5
0
0
1
2
3
V
d
(V)
4
5
5
0
10
15
20
25
30
I
d
(mA)
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
21
Gp (dB)
12
I
d
= 30 mA
8
P
1 dB
(dBm)
4.0
20
19
18
17
5
5
NF
P
1 dB
4
NF (dB)
3.5
NF (dB)
G
P
4
I
d
= 20 mA
3.0
P
1 dB
(dBm)
4
3
2
1
0
–55 –25
+25
+85
3
2
1
0
I
d
= 16 mA
0
I
d
= 12 mA
-4
0.1
2.5
I
d
= 12 mA
I
d
= 16 mA, 30 mA
I
d
= 20 mA
0.1
0.2 0.3
0.5
1.0
2.0
4.0
2.0
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
+125
TEMPERATURE (°C)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
I
d
=16mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-372
35 micro-X Package Dimensions
.085
2.15
4
GROUND
.083 DIA.
2.11
RF OUTPUT
AND BIAS
3
.020
.508
2
GROUND
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
1
.057
±
.010
1.45
±
.25
.100
2.54
.022
.56
.455
±
.030
11.54
±
.75
.006
±
.002
.15
±
.05
A06
RF INPUT
6-373
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