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SGF9

Description
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size66KB,8 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SGF9 Overview

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

Ordering number : ENN*0000
SGF9
N-Channel GaAs MESFET
SGF9
For C to X-band Local Oscillator and Amplifier
Preliminary
Features
Package Dimensions
unit : mm
0000
[SGF9]
3
Mold package-owing to the cross-mold technology,
this product can maintain the same performance as
the ceramic package.
The chip surface is covered
with the highly reliable protection film.
Automatic surface mounting is available.
.05
±
0
1.8
0.5
±0.05
2
1.8
±
0
.05
2
1
0.4
+0.1
0.1
--0.015
±0.02
0 to 0.1
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
Tj
Tstg
Conditions
4.1
±0.1
1 : Drain
2 : Source
3 : Gate
Ratings
6.0
--5.0
100
130
150
--55 to +150
+0.15
0.8
--0.05
(0.9
±0.05)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Source Leak Current
Saturated Drain Current
Gate-to-Source Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)GSO
IDSS
VGS(off)
yfs
Conditions
IGS=--10µA
VDS=3V, VGS=0
VDS=3V, ID=100µA
VDS=3V, ID=10mA
Ratings
min
--5.0
30
--0.5
20
35
40
70
--5.0
typ
max
Unit
V
mA
V
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40901 TS IM hirata No.0000-1/8
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