5962-3826703MTX datasheet, PDF

5962-3826703MTX: DescriptionEEPROM, 128KX8, 200ns, Parallel, CMOS, CPGA30, CERAMIC, PGA-30; Categorystorage storage; File Size468KB，16 Pages; Manufacturere2v technologies

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5962-3826703MTX Overview

EEPROM, 128KX8, 200ns, Parallel, CMOS, CPGA30, CERAMIC, PGA-30

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	PGA
package instruction	PGA,
Contacts	30
Reach Compliance Code	unknow
ECCN code	3A001.A.2.C
Maximum access time	200 ns
Other features	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS
Data retention time - minimum	10
JESD-30 code	R-CPGA-P30
JESD-609 code	e0
length	16.5 mm
memory density	1048576 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	30
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	PGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum seat height	4.4 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal pitch	2.54 mm
Terminal location	PERPENDICULAR
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm
Maximum write cycle time (tWC)	10 ms
Base Number Matches	1

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