SS22-S210
SS22 - S210
Features
•
•
•
Glass passivated junctions.
High current capability, low V
F
.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
22
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
20
23
30
24
40
Value
25
50
26
60
2.0
50
-65 to +150
-65 to +125
28
80
29
90
210
100
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient *
Value
1.3
75
Units
W
°C/W
*
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
V
F
I
R
T
A
= 25°C unless otherwise noted
Parameter
22
Forward Voltage @ 2.0 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 100°C
23
500
24
Device
25
26
0.4
10
28
29
850
210
700
Units
mV
mA
mA
2001
Fairchild Semiconductor Corporation
SS22-S210, Rev. C
SS22-S210
Schottky Rectifiers
(continued)
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
2
50
20
T
A
= 25
º
C
f = 1.0 MHz
Vsig = 50mVp-p
SS22-24
1.5
Forward Current, I
F
[A]
10
5
1
0.5
SINGLE PHASE
HALF WAVE
60Hz
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 8.0x8.0mm
COPPER PAD AREAS
SS28 - S210
1
SS25-26
0
50
60
70
80 90 100 110 120 130 140 150
Lead Temperature [ºC]
0.1
0.2
0.3
Figure 1. Forward Current Derating Curve
0.4 0.5 0.6 0.7 0.8 0.9
Forward Voltage, V
F
[V]
1
1.1
Figure 2. Forward Voltage Characteristics
10
Total Capacitance, C
T
[pF]
SS22-24
T
A
= 100
º
C
500
SS22-24
Reverse Current, I
R
[mA]
1
200
100
50
T
A
= 25
º
C
f = 1.0 MHz
Vsig = 50mVp-p
SS25-S210
0.1
T
A
= 75
º
C
SS25-S210
T
A
= 25
º
C
0.01
20
10
0.1
0.001
0
20
40
60
80
100
Reverse Voltage, V
R
[V]
120
140
0.5 1
5 10 20
Reverse Voltage, V
R
[V]
50 100
Figure 3. Reverse Current vs Reverse Voltage
Figure 4. Total Capacitance
Peak Forward Surge Current, I
FSM
[A]
60
50
40
30
20
10
0
8.3ms Single Half Sine-Wave
JEDEC Method
1
2
5
10
20
50
Number of Cycles at 60Hz
100
Figure 5. Non-Repetitive Surge Current
SS22-S210, Rev. C
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not intended to be an exhaustive list of all such trademarks.
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DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
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LittleFET™
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MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
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®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
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SuperSOT™-6
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SyncFET™
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®
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support device or system whose failure to perform can
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be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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