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Dim
Min
Max
Min Max
A
5.59
6.22 0.220 0.245
B
6.60
7.11 0.260 0.280
C
2.75
3.25 0.108 0.128
D
0.152 0.305 0.006 0.012
E
7.75
8.13 0.305 0.320
F
2.00
2.62 0.079 0.103
G
0.051 0.203 0.002 0.008
H
0.76
1.27 0.030 0.05
In mm
In
inch
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•
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
Data Sheet 2709, Rev. -
3.0
I
(AV)
, AVERAGE FORWARD CURRENT (A)
2.5
I
F,
INSTANTANEOUS FORWARD CURRENT (A)
10
2.0
1.0
1.5
1.0
0.1
0.5
T
j
= 25°C
I
F
Pulse Width: 300 µs
0
25
50
75
100
125
150
175
0.01
0
0.4
0.8
1.2
1.6
T
L
, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
Single Half-Sine-Wave
(JEDEC Method)
1000
T
j
= 125°C
100
100
80
60
10
40
1.0
T
j
= 25°C
20
0
1
10
100
0.1
0
20
40
60
80
100
120
140
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Forward Surge Current Derating Curve
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
t
rr
+0.5A
50
Ω
NI (Non-inductive)
10
Ω
NI
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
1.0
Ω
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
Ω
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
Ω
.
-1.0A
Set time base for 10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
•
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Deer Park, NY 11729-4681
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(631) 586-7600 FAX (631) 242-9798
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World Wide Web Site - http://www.sensitron.com
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•
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
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