FRF254D1 datasheet, PDF - EEWORLD Datasheet

FRF254D1: DescriptionPower Field-Effect Transistor, 17A I(D), 250V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA; CategoryDiscrete semiconductor The transistor; File Size145KB，4 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FRF254D1 Overview

Power Field-Effect Transistor, 17A I(D), 250V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Parameter Name	Attribute value
Maker	Fairchild
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (ID)	17 A
Maximum drain-source on-resistance	0.185 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	51 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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