GFP50N03
N-Channel Enhancement-Mode MOSFET
CH
EN ET
T
REN
F
TO-220AB
0.415 (10.54)
Max.
0.154 (3.91)
Dia.
0.142 (3.60)
0.113 (2.87)
0.102 (2.56)
D
V
DS
30V
R
DS(ON)
13
m
Ω
I
D
50A
®
D
G
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
G
*
0.155 (3.93)
0.134 (3.40)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.580 (14.73)
0.360 (9.14)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.104 (2.64)
0.094 (2.39)
S
Features
• Advanced Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
0.410 (10.41)
0.350 (8.89)
G
PIN
D
S
0.160 (4.06)
0.09 (2.28)
0.560 (14.22)
0.530 (13.46)
Mechanical Data
0.037 (0.94)
0.026 (0.66)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.190 (4.83)
0.022 (0.56)
0.014 (0.36)
Dimensions in inches
and (millimeters)
*
May be notched or flat
Case:
JEDEC TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Torque:
10 in-lbs maximum
Weight:
2.0g
Maximum Ratings and Thermal Characteristics
(T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(1)
Pulsed Drain Current
Maximum Power Dissipation
T
C
= 25°C
T
C
= 100°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
T
L
R
θJC
R
θJA
C
= 25°C unless otherwise noted)
Limit
30
Unit
V
±
20
50
100
62.5
25
–55 to 150
275
2.0
62.5
A
W
°C
°C
°C/W
°C/W
Operating Junction and Storage Temperature Range
Lead Temperature (1/8” from case for 5 sec.)
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Notes:
(1) Maximum DC current limited by the package
5/1/01
GFP50N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
(T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
(1)
Drain-Source On-State Resistance
(1)
Forward Transconductance
(1)
Diode Forward Voltage
Dynamic
(1)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Reverse Recovery Time
Note:
(1) Pulse test; pulse width
≤
300
µs,
duty cycle
≤
2%
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 0V, V
GS
= ±20V
V
DS
= 30V, V
GS
= 0V
V
DS
≥
5V, V
GS
= 10V
V
GS
= 10V, I
D
= 25A
V
GS
= 4.5V, I
D
= 20A
V
DS
= 10V, I
D
= 25A
I
S
= 25A, V
GS
= 0V
30
1.0
–
–
60
–
–
–
–
–
–
–
–
–
11
15
40
0.9
–
3.0
±100
1
–
13
20
–
1.3
V
nA
µA
A
mΩ
S
V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
t
rr
V
DS
= 15V, V
GS
= 5V, I
D
= 50A
V
DS
= 15V, V
GS
= 10V
I
D
= 50A
–
–
–
–
16
35
8
6
11
11
48
15
1850
315
145
160
22
60
–
–
20
20
80
30
–
–
–
–
ns
pF
ns
nC
V
DD
= 15V, R
L
= 15Ω
I
D
≈
1A, V
GEN
= 10V
R
G
= 6Ω
V
GS
= 0V
V
DS
= 15V
f = 1.0MH
Z
I
F
= 25A, di/dt = 100A/µs
–
–
–
–
–
–
–
–
V
DD
t
on
t
off
t
r
90%
Switching
Test Circuit
V
GEN
R
G
V
IN
D
R
D
V
OUT
Switching
Waveforms
t
d(on)
t
d(off)
t
f
90 %
10%
INVERTED
90%
Output, V
OUT
DUT
10%
G
50%
50%
S
Input, V
IN
10%
PULSE WIDTH
GFP50N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
80
5.0V
4.5V
A
= 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
V
GS
=10V
6.0V
4.0V
60
Fig. 2 – Transfer Characteristics
V
DS
= 10V
50
I
D
-- Drain Source Current (A)
I
D
-- Drain Current (A)
60
40
30
T
J
= 125°C
--55°C
10
0
25°C
40
3.5V
20
20
3.0V
2.5V
0
0
1
2
3
4
5
1
2
3
4
5
V
DS
-- Drain-to-Source Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
vs. Temperature
1.8
I
D
= 250µA
0.03
0.025
0.02
Fig. 4 – On-Resistance
vs. Drain Current
V
GS(th)
-- Threshold Voltage (V)
1.4
1.2
R
DS(ON)
-- On-Resistance (Ω)
1.6
V
GS
= 4.5V
5V
0.015
10V
0.01
0.005
0
1
0.8
0.6
--50
--25
0
25
50
75
100
125
150
0
20
40
60
80
100
T
J
-- Junction Temperature (°C)
I
D
-- Drain Current (A)
Fig. 5 – On-Resistance
vs. Junction Temperature
1.6
V
GS
= 10V
I
D
= 25A
R
DS(ON)
-- On-Resistance
(Normalized)
1.4
1.2
1
0.8
0.6
--50
--25
0
25
50
75
100
125
150
T
J
-- Junction Temperature (°C)
GFP50N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
0.04
10
I
D
= 25A
Fig. 7 – Gate Charge
V
GS
-- Gate-to-Source Voltage (V)
V
DS
= 15V
I
D
= 15A
8
0.035
R
DS(ON)
-- On-Resistance (Ω)
0.03
0.025
0.02
0.015
0.01
0.005
0
2
4
6
8
10
25°C
T
J
= 125°C
6
4
2
0
0
10
20
30
35
V
GS
-- Gate-to-Source Voltage (V)
Q
g
-- Charge (nC)
Fig. 8 – Capacitance
2500
f = 1MH
Z
V
GS
= 0V
2000
C
iss
1500
100
Fig. 9 – Source-Drain Diode
Forward Voltage
V
GS
= 0V
I
S
-- Source Current (A)
C -- Capacitance (pF)
10
1
T
J
= 125°C
25°C
--55°C
1000
500
0.1
C
oss
C
rss
0
5
10
15
20
25
30
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0
V
DS
-- Drain-to-Source Voltage (V)
V
SD
-- Source-to-Drain Voltage (V)
GFP50N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
44
1
Fig. 11 – Transient Thermal
Impedance
R
θJA
(norm)
-- Normalized Thermal
Impedance
BV
DSS
-- Breakdown Voltage (V)
43
42
41
40
39
38
37
36
--50
I
D
= 250µA
0.1
1. Duty Cycle, D = t
1
/ t
2
2. R
θJA
(t) = R
θJA(norm)
*R
θJA
3. R
θJA
= 2.0°C/W
4. T
J
-- T
A
= P
DM
* R
θJA
(t)
0.01
0.0001
0.001
0.01
0.1
1
10
--25
0
25
50
75
100
125
150
T
J
-- Junction Temperature (°C)
Pulse Duration (sec.)
Fig. 12 – Power vs. Pulse Duration
1000
Single Pulse
R
θJA
= 2.0°C/W
T
C
= 25°C
1000
Fig. 13 – Maximum Safe Operating Area
800
I
D
-- Drain Current (A)
100
1m
10
m
10
Power (W)
600
0
µ
s
s
400
10
R
DS(ON)
Limit
100ms
V
GS
= 10V
Single Pulse
R
θJC
= 2.0°C/W
T
A
= 25°C
DC
s
200
0
0.0001
0.001
0.01
0.1
1
10
1
0.1
1
10
100
Pulse Duration (sec.)
V
DS
-- Drain-Source Voltage (V)
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