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5082-3077#T50

Description
200V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size124KB,4 Pages
ManufacturerAVAGO
Websitehttp://www.avagotech.com/
Download Datasheet Parametric Compare View All

5082-3077#T50 Overview

200V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2

5082-3077#T50 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW HARMONIC DISTORTION
applicationATTENUATOR; SWITCHING
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance0.3 pF
Nominal diode capacitance0.3 pF
Diode component materialsSILICON
Maximum diode forward resistance1.5 Ω
Diode resistance test current100 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
JESD-30 codeO-LALF-W2
JESD-609 codee0
Minority carrier nominal lifetime0.1 µs
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Certification statusNot Qualified
Reverse test voltage50 V
surface mountNO
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N5719, 1N5767, 5082-3001, 5082-3039,
5082-3077, 5082-3080/81, 5082-3188, 5082-3379
PIN Diodes for RF Switching and Attenuating
Data Sheet
Description/Applications
These general purpose switching diodes are intended for
low power switching applications such as RF duplexers,
antenna switching matrices, digital phase shifters, and time
multiplex filters. The 5082-3188 is optimized for VHF/UHF
bandswitching.
The RF resistance of a PIN diode is a function of the current
flowing in the diode. These current controlled resistors are
specified for use in control applications such as variable RF
attenuators, automatic gain control circuits, RF modula-
tors, electrically tuned filters, analog phase shifters, and
RF limiters.
Outline 15 diodes are available on tape and reel. The tape
and reel specification is patterned after RS-296-D.
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance
Outline 15
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
Maximum Ratings
Junction Operating and
Storage Temperature Range.........................-65°C to +150°C
Power Dissipation 25°C .................................................250 mW
(Derate linearly to zero at 150°C)
Peak Inverse Voltage (PIV) ...................................... same as V
BR
Maximum Soldering Temperature ............... 260°C for 5 sec
CATHODE
4.32 (.170)
3.81 (.150)
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).

5082-3077#T50 Related Products

5082-3077#T50 5082-3080#T25 5082-3039#T25 5082-3081#T25 5082-3077#T25
Description 200V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2 100V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2 150V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2 100V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2 200V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Contacts 2 2 2 2 2
Reach Compliance Code compli compli compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOW HARMONIC DISTORTION LOW HARMONIC DISTORTION LOW HARMONIC DISTORTION LOW HARMONIC DISTORTION LOW HARMONIC DISTORTION
application ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING
Minimum breakdown voltage 200 V 100 V 150 V 100 V 200 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum diode capacitance 0.3 pF 0.4 pF 0.25 pF 0.4 pF 0.3 pF
Nominal diode capacitance 0.3 pF 0.4 pF 0.25 pF 0.4 pF 0.3 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON
Maximum diode forward resistance 1.5 Ω 2.5 Ω 1.25 Ω 3.5 Ω 1.5 Ω
Diode resistance test current 100 mA 100 mA 100 mA 100 mA 100 mA
Diode resistance test frequency 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Diode type PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0 e0 e0
Minority carrier nominal lifetime 0.1 µs 1.3 µs 0.1 µs 2.5 µs 0.1 µs
Humidity sensitivity level 1 1 1 1 1
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Reverse test voltage 50 V 50 V 50 V 50 V 50 V
surface mount NO NO NO NO NO
technology POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1
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