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KTX111T-O-RTF/HU

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size58KB,4 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric Compare View All

KTX111T-O-RTF/HU Overview

Small Signal Bipolar Transistor,

KTX111T-O-RTF/HU Parametric

Parameter NameAttribute value
MakerKEC
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
・Including
two devices in TS6.
(Thin Super Mini type with 6 pin)
・Simplify
circuit design.
・Suffix
U
: Qualified to AEC-Q101.
ex) KTX111T-Y-RTF/HU
A
F
G
K
1
KTX111T
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
E
B
K
6
・Reduce
a quantity of parts and manufacturing process.
2
5
4
DIM
A
B
C
D
E
D
F
G
H
I
J
K
L
3
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
+ 0.1
0.4 _
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
J
Marking
Q1
Q2
h
FE
Rank
Type Name
6
5
4
Lot No.
B
1
2
3
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
1
2
3
Q1 MAXIMUM RATINGS (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
RATING
35
30
5
500
-500
UNIT
V
V
V
Q2 MAXIMUM RATINGS (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
RATING
-35
-30
-5
-500
500
UNIT
V
V
V
Q1, Q2 MAXIMUM RATINGS (Ta=25℃)
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600㎟×0.8㎜)
SYMBOL
P
C
*
T
j
T
stg
RATING
0.9
150
-55½150
UNIT
W
2018. 04. 10
Revision No : 2
I
6
5
4
L
EQUIVALENT CIRCUIT (TOP VIEW)
C
G
J
H
TS6
1/4

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