BSR18A
BSR18A
C
E
SOT-23
Mark: T92
B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and
switching applications at collector currents of 10
µA
to 100
mA. Sourced from Process 66.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
40
5.0
200
-55 to +150
Units
V
V
V
mA
°C
3
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
*BSR18A
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997
Fairchild Semiconductor Corporation
BSR18A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10
µA,
I
B
= 0
I
C
= 1.0 mA, I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V
V
EB
= 3.0 V, I
C
= 0
40
40
5.0
50
50
V
V
V
nA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
60
80
100
60
30
300
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.65
0.25
0.4
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
h
ie
h
fe
h
oe
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Small-Signal Current Gain
Output Admittance
I
C
= 10 mA, V
CE
= 20,
f = 100 MHz
V
CB
= 5.0 V, I
E
= 0, f = 100 kHz
V
EB
= 0.5 V, I
C
= 0, f = 100 kHz
V
CE
= 10 V,I
C
= 1.0 mA,f=1.0 kHz
V
CE
= 10 V,I
C
= 1.0 mA,f=1.0 kHz
V
CE
= 10 V,I
C
= 1.0 mA,f=1.0 kHz
2.0
100
3.0
250
4.5
10
12
400
60
µS
MHz
pF
pF
kΩ
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
I
C
= 10 mA, I
B1
= 1.0 mA,
V
EB
= 0.5 V
I
C
= 10 mA, I
B
on
= I
B
off
= 1.0 mA
35
35
275
75
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
0.01%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
BSR18A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
F E
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
250
V
CE
= 1 .0V
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
0.1
125°C
25 °C
β
= 10
200
150
25 °C
100
- 40 °C
0.05
0
- 40 °C
50
0.1
0.2
0.5 1
2
5
10 20
I
C
- COLLECTOR CURRE NT (mA)
50
100
1
10
100
I
C
- COLLECTOR CURRENT (mA)
200
V
BE( ON)
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
25 °C
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
β
= 10
- 40 °C
0.6
0.4
0.2
0
125 °C
0.6
0.4
0.2
0
0.1
25 °C
125 °C
3
V
CE
= 1V
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
200
1
10
I
C
- COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
10
CB
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
10
C obo
= 25V
CAPACITANCE (pF)
8
6
4
2
0
0.1
C ibo
1
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
REVERSE BIAS VOLTAGE (V)
10
BSR18A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
6
V
CE
= 5.0V
NF - NOISE FIGURE (dB)
5
4
3
2
I C = 1.0 mA, R S = 200Ω
I C = 100
µA,
R S = 200Ω
Noise Figure vs Source Resistance
12
NF - NOISE FIGURE (dB)
10
8
6
4
I C = 100
µA
I C = 1.0 mA
V
CE
= 5.0V
f = 1.0 kHz
1
0
0.1
I C = 100
µA,
R S = 2.0 kΩ
2
0
0.1
1
10
f - FREQUENCY (kHz)
100
1
10
R
S
- SOURCE RESISTANCE (
kΩ
)
100
Switching Times
vs Collector Current
500
ts
Turn On and Turn Off Times
vs Collector Current
500
t off
I
c
10
t on
100
TIME (nS)
100
TIME (nS)
t on
I
B1
=
tf
10
I
B1
= I
B2
=
I
c
10
tr
10
V
BE(OFF)
= 0.5V
t off
I = I =
B1
B2
I
c
10
td
1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
1
1
I
10
- COLLECTOR CURRENT (mA)
100
Power Dissipation vs
Ambient Temperature
350
P
D
- POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
BSR18A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
_ 4
)
Voltage Feedback Ratio
100
h
ie
- INPUT IMPEDANCE (k
Ω
)
10
Input Impedance
V
CE
= 10 V
f = 1.0 kHz
h
re
- VOLTAGE FEEDBACK RATIO (x10
10
1
1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
0.1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
Output Admittance
h
oe
- OUTPUT ADMITTANCE (
µ
mhos)
1000
V
CE
= 10 V
f = 1.0 kHz
h
fe
- CURRENT GAIN
1000
500
Current Gain
V
CE
= 10 V
f = 1.0 kHz
200
100
50
100
3
20
10
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
10
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
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