FRK160D4 datasheet, PDF - EEWORLD Datasheet

FRK160D4: Description50A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE; CategoryDiscrete semiconductor The transistor; File Size145KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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FRK160D4 Overview

50A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.04 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	300 W
Maximum pulsed drain current (IDM)	100 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Maximum off time (toff)	1200 ns
Maximum opening time (tons)	1050 ns
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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