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BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC-Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment due to 175 °C rating
1.3 Applications
12 V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain current
total power
dissipation
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
[1][2]
Min
-
-
-
Typ
-
-
-
Max
75
100
333
Unit
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
NXP Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
Quick reference data
…continued
Parameter
drain-source
on-state resistance
Conditions
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 7;
see
Figure 8
Min
-
Typ
3.4
Max
4
Unit
mΩ
Table 1.
Symbol
R
DSon
Static characteristics
I
GSS
gate leakage current V
DS
= 0 V; V
GS
= 20 V;
T
j
= 25 °C
non-repetitive
drain-source
avalanche energy
I
D
= 100 A; V
sup
≤
75 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
2
100
nA
Avalanche ruggedness
E
DS(AL)S
-
-
630
mJ
[1]
[2]
Refer to document 9397 750 12572 for further information.
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base;
connected to drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
[1]
It is not possible to make a connection to pin 2 of the SOT404 package.
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK764R0-75C
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
Version
SOT404
Type number
BUK764R0-75C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 April 2011
2 of 13
NXP Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 4
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
E
DS(AL)R
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 100 A; V
sup
≤
75 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
see
Figure 3
[4][5]
[6][7]
[3][1]
[3][2]
[1][2]
[1][3]
[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
-
Max
75
75
20
100
199
100
797
333
175
175
199
100
797
630
-
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
J
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
[3]
[4]
[5]
[6]
[7]
Refer to document 9397 750 12572 for further information.
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
BUK764R0-75C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 April 2011
3 of 13
NXP Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
200
I
D
(A)
150
003aab492
120
P
der
(%)
80
03aa16
100
(1)
40
50
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
10
3
I
AL
(A)
10
2
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aab385
(1)
10
(2)
(3)
1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig 3.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
BUK764R0-75C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 April 2011
4 of 13
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