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2N3829

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size606KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

2N3829 Overview

RF SMALL SIGNAL TRANSISTOR

2N3829 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Code_compli
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.36 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)350 MHz
Maximum off time (toff)65 ns
Maximum opening time (tons)35 ns
Base Number Matches1
2N3700
2N3701
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701
are silicon NPN transistors designed for high current
general purpose applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (TC=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
140
80
7.0
1.0
1.8
500
-65 to +200
350
97.2
UNITS
V
V
V
A
W
mW
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N3700
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=90V
-
10
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
VCB=90V, TA=150°C
VEB=5.0V
IC=100μA
IC=30mA
IE=100μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
VCE=10V, IC=0.1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=150mA, TA=-55°C
VCE=10V, IC=500mA
VCE=10V, IC=1.0A
-
-
140
80
7.0
-
-
-
50
90
100
40
50
15
10
10
-
-
-
0.2
0.5
1.1
-
-
300
-
-
-
2N3701
MIN
MAX
-
10
-
-
140
80
7.0
-
-
-
30
40
40
-
30
15
10
10
-
-
-
0.2
0.5
1.1
100
120
120
-
100
-
UNITS
nA
μA
nA
V
V
V
V
V
V
R1 (4-March 2014)

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