2N6606 datasheet, PDF - EEWORLD Datasheet

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2N6606: Description4 A, 400 V, SCR, TO-202; CategoryAnalog mixed-signal IC Trigger device; File Size579KB，4 Pages; ManufacturerCentral Semiconductor

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2N6606 Overview

4 A, 400 V, SCR, TO-202

2N6606 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	_compli
ECCN code	EAR99
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	5 mA
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Maximum leakage current	0.1 mA
On-state non-repetitive peak current	6 A
Number of components	1
Number of terminals	3
Maximum on-state current	275 A
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	1.6 A
Off-state repetitive peak voltage	60 V
Repeated peak reverse voltage	60 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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CS202-4B

CS202-4D

CS202-4M

CS202-4N

4.0 AMP SCR

200 THRU 800 VOLTS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS202-4B series

type is an epoxy molded silicon controlled rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

TO-202 CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

Peak Repetitive Off-State Voltage

RMS On-State Current (TC=85°C)

Peak One Cycle Surge (t=10ms)

t Value for Fusing (t=10ms)

Peak Gate Power (tp=20μs)

Average Gate Power Dissipation

Peak Gate Current (tp=20μs)

Critical Rate of Rise of On-State Current

Storage Temperature

Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

IDRM, IRRM

IGT

VGT

VTM

dv/dt

SYMBOL

VDRM

VRRM

IT(RMS)

ITSM

PGM

PG(AV)

IGM

di/dt

Tstg

CS202

-4B

200

CS202

-4D

400

4.0

4.5

3.0

0.2

1.2

CS202

-4M

600

CS202

-4N

800

UNITS

A/μs

°C

°C/W

-40 to +150

-40 to +125

7.5

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

Rated VDRM, VRRM, RGK=1.0KΩ

Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C

VD=12V, RL=10Ω

IT=50mA, RGK=1.0KΩ

VD=12V, RL=10Ω

ITM=8.0A, tp=380μs

VD=

⅔

VDRM, RGK=1.0KΩ, TC=125°C

TYP

MAX

200

2.0

0.8

1.8

UNITS

μA

V/μs

0.25

0.55

1.6

R4 (23-January 2012)

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