EEWORLDEEWORLDEEWORLD

Part Number

Search

BZX85C15_T50R

Description
Zener Diode, 15V V(Z), 5%, 1.3W, Silicon, Unidirectional, DO-41
CategoryDiscrete semiconductor    diode   
File Size152KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

BZX85C15_T50R Online Shopping

Suppliers Part Number Price MOQ In stock  
BZX85C15_T50R - - View Buy Now

BZX85C15_T50R Overview

Zener Diode, 15V V(Z), 5%, 1.3W, Silicon, Unidirectional, DO-41

BZX85C15_T50R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time18 weeks
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance15 Ω
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.3 W
Certification statusNot Qualified
Nominal reference voltage15 V
surface mountNO
technologyZENER
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current15 mA
Base Number Matches1
BZX85C3V3 - BZX85C56 — Zener Diodes
September 2013
BZX85C3V3 - BZX85C56
Zener Diodes
Tolerance = 5%
DO-41 Glass Case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
T
J
, T
STG
Parameter
Power Dissipation @ T
A
= 25°C
Power Dissipation @ T
L
= 25°C at 4 mm distance from the glass
package
Derate above 50°C
Operating and Storage Temperature Range
Value
1.0
1.3
6.67
-65 to +200
Units
W
mW/°C
°C
© 2007 Fairchild Semiconductor Corporation
BZX85C3V3 - BZX85C56 Rev. 1.1.0
1
www.fairchildsemi.com

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 552  2570  718  1022  1131  12  52  15  21  23 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号