Date:- 01 August 2012
Data Sheet Issue:- 3
Distributed Gate Thyristor
Types R1275NC14x to R1275NC21x
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1400-2100
1400-2100
1400-1800
1500-1900
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I
2
t
I
2
t
(di/dt)
cr
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Maximum average on-state current, T
sink
=55°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I
2
t capacity for fusing t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
I
2
t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
MAXIMUM
LIMITS
1275
861
508
2541
2147
15.5
17
1.20×10
6
1.45×10
6
1000
1500
5
2
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A
2
s
A
2
s
A/µs
A/µs
V
W
W
°C
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
Page 1 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Characteristics
PARAMETER
V
TM
V
TM
V
T0
r
T
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
55
TYP.
-
-
-
-
-
-
-
-
-
-
-
0.4
1.0
940
420
188
5.0
-
-
-
-
-
510
MAX. TEST CONDITIONS
(Note 1)
1.9
2.45
1.207
0.342
-
150
150
3.0
300
0.25
1000
1.0
2.0
-
500
-
-
60
70
0.024
0.048
26
-
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V, V
dr
=80%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V, V
dr
=80%V
DRM
, dV
dr
/dt=200V/µs
Double side cooled
Single side cooled
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V
V
D
=80% V
DRM
, Linear ramp, Gate o/c
Rated V
DRM
Rated V
RRM
T
j
=25°C
Rated V
DRM
T
j
=25°C
V
D
=67% V
DRM
, I
T
=2000A, di/dt=60A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
V
D
=10V, I
T
=3A
I
TM
=2000A
I
TM
=3825A
UNITS
V
V
V
mΩ
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
(dv/dt)
cr
Critical rate of rise of off-state voltage
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Turn-off time (note 2)
65
R
thJK
F
W
t
Thermal resistance, junction to heatsink
Mounting force
Weight
-
-
19
-
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
2)
The required t
q
(specified with dV
dr
/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of t
q
codes.
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
Page 2 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
14
16
18
20
21
V
DRM
V
DSM
V
1400
1600
1800
2000
2100
V
RRM
V
1400
1600
1800
1800
1800
V
RSM
V
1500
1700
1900
1900
1900
V
D
DC V
930
1040
1150
1250
1300
V
R
DC V
930
1040
1150
1150
1150
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other t
q
/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
Page 3 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(t
q
) and for the off-state voltage to reach full value (t
v
), i.e.
f
max
=
1
t
pulse
+
t
q
+
t
v
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let E
p
be the Energy per pulse for a given current and pulse width, in joules
Let R
th(J-Hs)
be the steady-state d.c. thermal resistance (junction to sink)
and T
SINK
be the heat sink temperature.
Then the average dissipation will be:
W
AV
=
E
P
⋅
f and T
SINK
(max .)
=
125
−
(
W
AV
⋅
R
th
(
J
−
Hs
)
)
14.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in Fig. 1
Fig. 1
(ii) Q
rr
is based on a 150µs integration time i.e.
150
µ
s
Q
rr
=
(iii)
∫
i
0
rr
.
dt
K Factor
=
Page 4 of 12
t
1
t
2
August 2012
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
T
SINK
(
new
)
=
T
SINK
(
original
)
−
E
⋅
(
k
+
f
⋅
R
th
(
J
−
Hs
)
)
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R
th(J-Hs)
= d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W
(TOT)
=
W
(original)
+
E
⋅
f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
T
SINK
(
new
)
=
T
SINK
(
original
)
−
(
E
⋅
R
th
⋅
f
)
Where T
SINK (new)
is the required maximum heat sink temperature and
T
SINK (original)
is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
rm
) of 67% of the maximum grade. If a different grade is being used or V
rm
is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1-
Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
V
r
R
=
4
⋅
C
S
⋅
di dt
2
Where:
V
r
C
S
R
= Commutating source voltage
= Snubber capacitance
= Snubber resistance
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
Page 5 of 12
August 2012
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