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C106B1

Description
4 A, 400 V, SCR, TO-202
CategoryAnalog mixed-signal IC    Trigger device   
File Size579KB,4 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

C106B1 Overview

4 A, 400 V, SCR, TO-202

C106B1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Parts packaging codeSFM
package instructionTO-202, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time40 µs
ConfigurationSINGLE
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current3 mA
JEDEC-95 codeTO-202
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum leakage current0.1 mA
On-state non-repetitive peak current20 A
Number of components1
Number of terminals3
Maximum on-state current4000 A
Maximum operating temperature110 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current4 A
Off-state repetitive peak voltage200 V
Repeated peak reverse voltage200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
CS202-4B
CS202-4D
CS202-4M
CS202-4N
4.0 AMP SCR
200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS202-4B series
type is an epoxy molded silicon controlled rectifier
designed for sensing circuit applications and control
systems.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=85°C)
Peak One Cycle Surge (t=10ms)
I
2
t Value for Fusing (t=10ms)
Peak Gate Power (tp=20μs)
Average Gate Power Dissipation
Peak Gate Current (tp=20μs)
Critical Rate of Rise of On-State Current
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
IDRM, IRRM
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
SYMBOL
VDRM
,
VRRM
IT(RMS)
ITSM
I
2
t
PGM
PG(AV)
IGM
di/dt
Tstg
TJ
Θ
JA
Θ
JC
CS202
-4B
200
CS202
-4D
400
4.0
30
4.5
3.0
0.2
1.2
50
CS202
-4M
600
CS202
-4N
800
UNITS
V
A
A
A
2
s
W
W
A
A/μs
°C
°C
°C/W
°C/W
-40 to +150
-40 to +125
80
7.5
CHARACTERISTICS:
(TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
Rated VDRM, VRRM, RGK=1.0KΩ
Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
VD=12V, RL=10Ω
IT=50mA, RGK=1.0KΩ
VD=12V, RL=10Ω
ITM=8.0A, tp=380μs
VD=
VDRM, RGK=1.0KΩ, TC=125°C
20
TYP
MAX
10
200
200
2.0
0.8
1.8
UNITS
μA
μA
μA
mA
V
V
V/μs
38
0.25
0.55
1.6
10
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