SMI-P CHIPS
MULTILAYER FERRITE CHIP POWER INDUCTORS
◆
FEATURES
◆
PRODUCT INDENTIFICATION
SMI –
SMI-P chip inductors are 3L line of high
current ferrite chip inductors. Minimized
design
that
is
suitable
for
portable
electronic equipments requiring low profile.
High Performance Characteristics
SMI-P chips exhibit low DC resistance and
high current.
Wide Inductance Range
SMI-P chip inductors cover a wide range of
inductance values from 1.0 µH to 10 µH.
High Reliability
SMI-P chip inductors have a monolithic
inor- ganic material construction that
effectively minimizes electromagnetic
interference.
High Soldering Heat Resistance
SMI-P chip inductors have high quality
termination allowing both flow and reflow
soldering methods to be used.
◆
PRODUCT DIMENSIONS
DCR
◆
OPERATING TEMPERATURE
:
-40 ~ 85℃
◆
TEST EQUIPMENTS AND TEST SETUP
L&Q&SRF
by Agilent E4991A RF Impedance
Analyzer with HP16197A Test Fixture.
by milli-ohm meter.
(1)
252010
(2)
P–
(3)
1R0
(4)
M
(5)
(1).Product Code
(2).Dimensions( in mm)
(3).P : For high current
(4).Inductance Code
(5).Tolerance Code
Code
M
N
Tolerance
±20%
±30%
◆
APPLICATIONS
SMI chip inductors can be used in a
variety of electronics including:
Mobile phones
MP3 Player
Bluetooth
DSC
LCD / DVR
Portable digital
equipment
PRODUCT NO.
A
2.0±0.20
2.5±0.20
3.2±0.20
B
1.6±0.20
2.0±0.20
2.5±0.20
C
1.0MAX
1.0±0.20
1.0±0.20
D
0.5±0.20
0.5±0.20
0.5±0.30
SMI-201610P
SMI-252010P
SMI-322510P
NOTE:Dimensions in mm
Page 69
SMI-P CHIPS
MULTILAYER FERRITE CHIP POWER INDUCTORS
◆
PRODUCT SPECIFICATIONS
Part Number
SMI-252010P-1R0M
SMI-252010P-2R2M
SMI-252010P-3R3M
SMI-252010P-4R7M
SMI-252010P-6R8M
SMI-252010P-100M
SMI-322510P-2R2M
SMI-322510P-3R3M
SMI-322510P-4R7M
SMI-322510P-6R8M
SMI-322510P-100M
Inductance
(µH)
1.0
2.2
3.3
4.7
6.8
10.0
2.2
3.3
4.7
6.8
10.0
Q
TYP
15
19
23
26
30
35
23
25
28
30
35
TEST FREQ
.
R
DC
(mΩ)
±20%
290
430
520
650
790
740
300
380
450
520
640
Current (mA) Max.
△L/Lo:30%
1200
1000
950
850
600
350
1300
1060
850
680
510
(MHz)
1
1
1
1
1
1
1
1
1
1
1
◆
PRODUCT SPECIFICATIONS
Part Number
SMI-201610P-1R2N
SMI-201610P-2R2N
SMI-201610P-3R3N
SMI-201610P-4R7N
Inductance
(µH)
1.2
2.2
3.3
4.7
TEST FREQ
.
R
DC
(mΩ)
±30%
100
120
140
160
Current (mA) Max.
△T/To:40
℃
1400
1300
1200
1100
(MHz)
1
1
1
1
The maximum DC current having inductance decrease within
△L
=30% and temperature to rise becomes
△T=40℃,
whichever is lower. (Reference ambient temperature 20℃)
Page 70
京公网安备 11010802033920号
EEWORLD
