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VS-53MT100KPBF

Description
Silicon Controlled Rectifier
CategoryAnalog mixed-signal IC    Trigger device   
File Size249KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

VS-53MT100KPBF Overview

Silicon Controlled Rectifier

VS-53MT100KPBF Parametric

Parameter NameAttribute value
MakerVishay
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Trigger device typeSCR
Base Number Matches1
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Controlled Bridge (Power Modules),
55 A to 110 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 4000 V
RMS
isolating voltage
• UL E78996 approved
MT-K
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
55 A to 110 A
800 V to 1600 V
MT-K
Three phase bridge
PRODUCT SUMMARY
I
O
V
RRM
Package
Circuit
DESCRIPTION
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose and
heavy duty applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
O
I
FSM
I
2
t
I
2
t
V
RRM
T
Stg
T
J
Range
Range
Range
CHARACTERISTICS
VALUES
5.MT...K
55
T
C
50 Hz
60 Hz
50 Hz
60 Hz
85
390
410
770
700
7700
VALUES
9.MT...K
90
85
950
1000
4525
4130
45 250
800 to 1600
-40 to 125
-40 to 125
VALUES
11.MT...K
110
85
1130
1180
6380
5830
63 800
UNITS
A
°C
A
A
2
s
A
2
s
V
°C
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
80
100
120
140
160
80
100
120
140
160
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1100
1300
1500
1700
900
1100
1300
1500
1700
V
DRM
, MAXIMUM
REPETITIVE PEAK
OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
I
RRM
/I
DRM
,
MAXIMUM
AT T
J
= 125 °C
mA
VS-5.MT...K
10
VS-9.MT...K
VS-11.MT...K
20
Revision: 27-Feb-14
Document Number: 94353
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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