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GB20XF60K

Description
igbt module 30 amp 600 volt non-punch through
CategoryDiscrete semiconductor    The transistor   
File Size198KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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GB20XF60K Overview

igbt module 30 amp 600 volt non-punch through

GB20XF60K Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionFLANGE MOUNT, R-XUFM-X17
Contacts17
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)30 A
Collector-emitter maximum voltage600 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X17
Number of components6
Number of terminals17
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)185 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)233 ns
Nominal on time (ton)129 ns
Base Number Matches1
GB20XF60K
Vishay High Power Products
IGBT Sixpack Module, 21 A
FEATURES
• Low diode V
F
• 10 µs short circuit capability
• Square RBSOA
• Low V
CE(on)
non punch through IGBT technology
• HEXFRED
®
antiparallel diode with ultrasoft reverse
recovery characteristics
• Positive V
CE(on)
temperature coefficient
ECONO2 6PACK
RoHS
COMPLIANT
• Ceramic DBC substrate
• Low stray inductance design
• Speed 8 to 60 kHz
• Totally lead (Pb)-free
• Designed and qualified for industrial market
PRODUCT SUMMARY
V
CES
V
CE(on)
(typical)
t
sc
at T
J
= 150 °C
I
C
at T
C
= 80 °C
600 V
1.88 V
> 10 µs
21 A
BENEFITS
• Benchmark efficiency for motor control
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
See fig. C.T.5
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Maximum power dissipation
(IGBT and Diode)
Maximum operating junction temperature
Storage temperature range
Isolation voltage
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
P
D
T
J
T
Stg
V
ISOL
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
600
30
21
60
60
30
21
60
± 20
185
W
103
150
°C
- 40 to + 125
AC 2500 (minimum)
V
V
A
UNITS
V
Document Number: 94472
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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