4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
March 2010 - Rev 13-Mar-10
B1007-QT
Features
Excellent Transmit LO/Output Buffer Stage
3x3mm, QFN
23.0 dB Small Signal Gain
+19.0 dBm P1dB Compression Point
4.5 dB Noise Figure
Variable Gain with Adjustable Bias
100% RF, DC and Output Power Testing
General Description
Mimix Broadband’s two stage 4.0-11.0 GHz GaAs MMIC
buffer amplifier has a small signal gain of 23.0 dB with a
+20.0 dBm P1dB output compression point. The device
also provides variable gain regulation with adjustable
bias. The device is ideally suited as an LO or RF buffer
stage with broadband performance at a very low cost.
The device comes in an RoHS compliant 3x3mm QFN
surface mount package offering excellent RF and
thermal properties. This device is well suited for
Microwave and Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
+4.3 VDC
200 mA
0V
+20.0 dBm
-65 to +165
º
C
-55 to +85
º
C
150
º
C
Class A
Class 1A
MSL1
Channel temperature affects a device's MTTF. It is recommended to
keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output IP3 (OIP3)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=4.0V, Vg2=-0.5V Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
4.0
-
-
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
20.0
12.0
23.0
+/-1.5
50.0
4.5
+19.0
+21.0
31
+4.0
-0.35
100
Max.
11.0
-
-
-
-
-
-
-
-
-
+4.0
-0.1
130
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
March 2010 - Rev 13-Mar-10
B1007-QT
Buffer Amplifier Measurements
0
-5
-10
XB1007-QT: S11 vs Frequency
Vd=4V,Id=100mA
26
24
22
20
18
16
14
12
10
8
6
4
2
0
XB1007-QT: S21 vs Frequency
Vd=4V,Id=100mA
S11 (dB)
-15
-20
-25
-30
-35
1
2
3
4
5
6
7
8
9
10
11
12
13
14
S21 (dB)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
Frequency (GHz)
0
-10
-20
XB1007-QT: S12 vs Frequency
Vd=4V,Id=100mA
0
XB1007-QT: S22 vs Frequency
Vd=4V,Id=100mA
-5
S12 (dB)
-30
-40
-50
-60
-70
-80
1
2
3
4
5
6
7
8
9
10
11
12
13
14
S22 (dB)
-10
-15
-20
-25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
Frequency (GHz)
30
28
26
24
XB1007-QT: P1dB vs Frequency
Vd=4V, Id=130mA
30
28
26
24
XB1007-QT: Psat vs Frequency
Vd=4V, Id=130mA
P1dB (dBm)
Psat (dBm)
'-40C
'+25C
'+85C
22
20
18
16
14
12
10
4
5
6
7
8
9
10
11
22
20
18
16
14
12
10
4
5
6
7
8
9
10
11
'-40C
'+25C
'+85C
Frequency (GHz)
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
March 2010 - Rev 13-Mar-10
B1007-QT
Buffer Amplifier Measurements (cont.)
35
XB1007-QT, Vd = 4V, Id = 90 mA, Pin = -15dBm: OIP3 vs Frequency
35
30
25
XB1007-QT, Pin = -15dBm: OIP3 vs Gain
30
OIP3 (dBm)
OIP3 (dBm)
25
20
15
4 GHz
10
6 GHz
8 GHz
10 GHz
6
8
10
12
14
16
Gain (dB)
18
20
22
24
26
20
15
5
10
4
5
6
7
Frequency (GHz)
8
9
10
0
35
30
25
XB1007-QT, Pin = -15dBm: OIP3 vs Current
10
XB1007-QT, Vd = 4V, Id = 100mA: Noise Figure over Temperature
9
8
Noise Figure (dB)
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
4
5
6
7
8
9
10
11
12
13
14
15
16
Drain Current (mA)
Frequency (GHz)
25 C
50 C
75 C
OIP3 (dBm)
20
15
10
5
0
4 GHz
6 GHz
8 GHz
10 GHz
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
March 2010 - Rev 13-Mar-10
B1007-QT
Package Dimensions / Layout
(Note: Engineering designator is 8MPA0811)
Functional Block Diagram
gnd
1
6
gnd
1
5
gnd
1
4
VD
1
3
Pin Designations
12
11
10
9
gnd
RF Out
gnd
gnd
Pin Number Pin Name Pin Function Nominal Value
GND
Ground
1
2
RF In
RF Input
GND
Ground
3-4
5
VG
Gate Bias
-0.5V
6-10
GND
Ground
11
RF Out
RF Output
GND
Ground
12
13
VD
Drain Bias
4.0V, 100 mA
14-16
GND
Ground
gnd
RF In
gnd
gnd
1
2
3
4
5
VG
6
gnd
7
gnd
8
gnd
Page 4 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier, QFN
March 2010 - Rev 13-Mar-10
B1007-QT
App Note [1] Biasing -
The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended
to bias this device at Vd=4V with Id=100 mA. It is also recommended to use active biasing to control the drain currents because this gives the most
reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is
-0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure
negative gate bias is available before applying the positive drain supply.
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
XB1007-QT-0G00: MTTF hours vs. Package Base Temperature
1.0E+15
1.0E+14
1.0E+13
1.0E+12
Vdd = 4 V, Idd = 100 mA
Vdd = 4 V, Idd = 130 mA
MTTF (hours)
1.0E+11
1.0E+10
1.0E+09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
1.0E+04
20
30
40
50
60
70
80
90
100
110
120
Package Base Temp (ºC)
XB1007-QT-0G00: Tch (max) vs. Package Base Temperature
220
200
180
Tch_max (ºC)
160
140
120
100
80
60
20
30
40
50
60
70
80
90
100
110
120
Vdd = 4 V, Idd = 100 mA
Vdd = 4 V, Idd = 130 mA
Package Base Temp (ºC)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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