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Datasheet> All Categories > semiconductor> Discrete semiconductor> ZTX756
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ZTX756

Description
Digital transistor -
Categorysemiconductor    Discrete semiconductor   
File Size72KB，2 Pages
ManufacturerAll Sensors
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ZTX756 Overview

Digital transistor -

ZTX756 Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle
Transistor polarityPNP
Installation styleThrough Hole
Package/boxTO-92
DC current gain hFE min50 @ 100 mA @ 5 V
Maximum operating frequency30 MHz (Min)
Collector-emitter maximum voltage VCEO200 V
Collector continuous current0.5 A
Power dissipation1000 mW
Maximum operating temperature+ 200 C
Minimum operating temperature- 55 C

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PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ZTX756
ZTX757
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX756
-200
-200
-5
-1
-0.5
1
E-Line
TO92 Compatible
ZTX757
-300
-300
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
50
40
30
20
3-265
ZTX756
ZTX757
UNIT
V
V
V
-100
-100
-0.5
-1.0
-1.0
50
40
30
20
MHz
pF
nA
nA
nA
V
V
V
CONDITIONS.
MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
-200
-200
-5
-100
-100
-0.5
-1.0
-1.0
MAX. MIN.
-300
-300
-5
MAX.
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
V
CB
=-160V, I
E
=0
V
CB
=-200V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-100mA,
I
B
=-10mA*
I
C
=-100mA,
I
B
=-10mA*
IC=-100mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz

ZTX756 Related Products

ZTX756 ZTX756STOB ZTX756STOA ZTX756STZ
Description Digital transistor - Bipolar small signal - Bipolar small signal - Bipolar small signal -
Maker All Sensors All Sensors All Sensors All Sensors
RoHS no no no no
Configuration Single Single Single Single
Transistor polarity PNP PNP PNP PNP
Installation style Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92
Maximum operating frequency 30 MHz (Min) 30 MHz (Min) 30 MHz (Min) 30 MHz (Min)
Collector-emitter maximum voltage VCEO 200 V 200 V 200 V 200 V
Power dissipation 1000 mW 1000 mW 1000 mW 1000 mW
Maximum operating temperature + 200 C + 200 C + 200 C + 200 C
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C
Emitter-Base voltage VEBO - 5 V 5 V 5 V
Maximum DC collector current - 0.5 A 0.5 A 0.5 A

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