MPSA12PSTZ datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > semiconductor> Discrete semiconductor> MPSA12PSTZ

Preview

MPSA12PSTZ: DescriptionDarlington transistor -; Categorysemiconductor Discrete semiconductor; File Size39KB，1 Pages; ManufacturerAll Sensors

Download Datasheet Parametric Compare View All

MPSA12PSTZ Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	MPSA12PSTZ	-	-	View	Buy Now

MPSA12PSTZ Overview

Darlington transistor -

MPSA12PSTZ Parametric

Parameter Name	Attribute value
Maker	All Sensors
RoHS	no
Configuration	Single
Transistor polarity	NPN
Installation style	Through Hole
Package/box	TO-92
Collector-emitter maximum voltage VCEO	20 V
Emitter-Base voltage VEBO	10 V
Maximum DC collector current	0.5 A
Maximum collector cut-off current	0.1 uA
Maximum operating temperature	+ 150 C
Minimum operating temperature	- 55 C

Preview

Download Datasheet

View All

NPN SILICON PLANAR MEDIUM

POWER DARLINGTON TRANSISTOR

ISSUE 2 SEPT 93

FEATURES

* 1 Watt power dissipation

* 1 Amp continuous current

* Minimum gain =8K at 250mA

MPSA12

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

100

12

2

1

E-Line

TO92 Compatible

VALUE

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

SYMBOL

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

I

CBO

MIN.

100

12

100

1.1

2

10K

8K

100

MHz

TYP.

MAX.

UNIT

V

nA

V

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=100

µ

A, I

B

=0*

I

E

=10

µ

A, I

C

=0

V

CB

=80V, I

E

=0

V

EB

=10V, I

C

=0

I

C

=250mA, I

B

=0.25mA

I

C

=250mA, I

B

=0.25mA

I

C

=100mA, V

CE

=5V*

I

C

=250mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V

f=20MHz

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

V

CE(sat)

V

BE(sat)

Static Forward Current h

FE

Transfer Ratio

Transition

Frequency

f

T

*Measured under pulsed conditions. Pulse width =300

µ

s. Duty cycle

≤

2%

MPSA12PSTZ Related Products

	MPSA12PSTZ	MPSA12STOA	MPSA12	MPSA12PSTOB
Description	Darlington transistor -	Darlington transistor -	Darlington transistor -	Darlington transistor -
Maker	All Sensors	All Sensors	All Sensors	All Sensors
RoHS	no	no	no	no
Configuration	Single	Single	Single	Single
Transistor polarity	NPN	NPN	NPN	NPN
Installation style	Through Hole	Through Hole	Through Hole	Through Hole
Package/box	TO-92	TO-92	TO-92	TO-92
Collector-emitter maximum voltage VCEO	20 V	100 V	100 V	20 V
Emitter-Base voltage VEBO	10 V	12 V	12 V	10 V
Maximum DC collector current	0.5 A	1 A	1 A	0.5 A
Maximum collector cut-off current	0.1 uA	0.1 uA	0.1 uA	0.1 uA
Maximum operating temperature	+ 150 C	+ 200 C	+ 200 C	+ 150 C
Minimum operating temperature	- 55 C	- 55 C	- 55 C	- 55 C

Recommended Resources

Detailed explanation of the working principle of linear regulated power supply

Stator circuit series reactor starts manual and automatic control circuit

TLE4203 push-pull output chain circuit and waveform diagram

audio intermediate amplifier.gif

Broadband Difet Op Amp Circuit

845E computer motherboard circuit diagram_22

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components