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ZTX541STZ

Description
Bipolar small signal -
Categorysemiconductor    Discrete semiconductor   
File Size56KB,2 Pages
ManufacturerAll Sensors
Download Datasheet Parametric Compare View All

ZTX541STZ Overview

Bipolar small signal -

ZTX541STZ Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle
Transistor polarityPNP
Installation styleThrough Hole
Package/boxTO-92
Collector-emitter maximum voltage VCEO100 V
Emitter-Base voltage VEBO5 V
Maximum DC collector current0.1 A
Power dissipation300 mW
Maximum operating frequency80 MHz (Min)
Maximum operating temperature+ 175 C
Minimum operating temperature- 55 C
PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 – MARCH 94
ZTX541
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-100
-100
-5
-100
300
-55 to +175
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN. TYP.
-100
-100
-5
-0.5
-0.5
-10
-0.5
-1.0
30
80
10
MHz
pF
MAX.
UNIT
V
V
V
µ
A
µ
A
µ
A
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10
µ
A
I
E
=-100
µ
A
V
CB
=-80V
V
CE
=-80V, R
BE
=50K
V
CE
=-80V, R
BE
=50K
I
C
=-2mA, I
B
=-0.1mA
I
C
=-2mA, I
B
=-0.1mA
I
C
=-2mA, V
CE
=-1V
I
C
=-5mA, V
CE
=-5V
f=60MHz
V
CB
=-6V, f=1MHz
Emitter Cut-Off Current I
CER
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
V
V
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
3-189

ZTX541STZ Related Products

ZTX541STZ ZTX541STOA
Description Bipolar small signal - Bipolar small signal -
Maker All Sensors All Sensors
RoHS no no
Configuration Single Single
Transistor polarity PNP PNP
Installation style Through Hole Through Hole
Package/box TO-92 TO-92
Collector-emitter maximum voltage VCEO 100 V 100 V
Emitter-Base voltage VEBO 5 V 5 V
Maximum DC collector current 0.1 A 0.1 A
Power dissipation 300 mW 300 mW
Maximum operating frequency 80 MHz (Min) 80 MHz (Min)
Maximum operating temperature + 175 C + 175 C
Minimum operating temperature - 55 C - 55 C
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