ZTX320 datasheet, PDF - EEWORLD Datasheet

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ZTX320: DescriptionDigital transistor -; Categorysemiconductor Discrete semiconductor; File Size55KB，2 Pages; ManufacturerAll Sensors

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ZTX320 Overview

Digital transistor -

ZTX320 Parametric

Parameter Name	Attribute value
Maker	All Sensors
RoHS	no
Configuration	Single
Transistor polarity	NPN
Installation style	Through Hole
Package/box	TO-92
DC current gain hFE min	20 @ 3 mA @ 1 V
Maximum operating frequency	600 MHz (Min)
Collector-emitter maximum voltage VCEO	15 V
Collector continuous current	0.5 A
Power dissipation	300 mW
Maximum operating temperature	+ 175 C
Minimum operating temperature	- 55 C

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NPN SILICON PLANAR

HIGH SPEED SWITCHING TRANSISTORS

ISSUE 3 APRIL 94

FEATURES

* 15 Volt V

CEO

* f

T

=600 MHz

APPLICATIONS

* VHF/UHF operation

ZTX320 ZTX321

ZTX322 ZTX323

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Base Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

B

I

C

P

tot

T

j

:T

stg

30

15

3

100

500

300

E-Line

TO92 Compatible

VALUE

UNIT

V

mA

mW

°C

-55 to +175

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Sustaining Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter ZTX320, ZTX322

Saturation Voltage ZTX323

ZTX321

Base-Emitter

ZTX320, ZTX322

Saturation Voltage ZTX323

ZTX321

Static Forward

Current Transfer

Ratio

Output Capacitance

Input Capacitance

Transition Frequency at f=100MHz

Noise Figure

Power Gain

ZTX320, ZTX321

ZTX322

ZTX323

SYMBOL

V

(BR)CBO

V

CEO(SUS)

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

C

obo

C

ibo

f

T

N

g

pe

3-159

600

400

6

typical

15

20

100

MIN.

30

15

3

0.01

0.2

0.4

1.0

300

150

300

1.7

1.6

pF

MHz

dB

MAX.

UNIT

V

µ

A

µ

A

CONDITIONS.

I

C

=10

µ

A, I

E

=0

I

C

=10mA, I

B

=0

I

E

=10

µ

A, I

C

=0

V

CB

=15V, I

E

=0

V

EB

=2V, I

C

=0

I

C

=10mA, I

B

=1mA

I

C

=10mA, I

B

=1mA

I

C

=3mA, I

B

=0.3mA

I

C

=10mA, I

B

=1mA

I

C

=10mA, I

B

=1mA

I

C

=3mA, I

B

=0.3mA

I

C

=3mA, V

CE

=1V

I

C

=3mA, V

CE

=1V

I

C

=3mA, V

CE

=1V

V

CB

=10V, f=1MHz

V

EB

=0.5V, f=1MHz

I

C

=4mA, V

CE

=10V

I

C

=30mA, V

CE

=10V

I

E

=1mA, V

CE

=6V

R

S

=400

Ω,

f=60MHz

I

C

=6mA, V

CB

=12V

f=200MHz

V

ZTX320 Related Products

	ZTX320	ZTX320STOB	ZTX320STOA
Description	Digital transistor -	Bipolar small signal -	Bipolar small signal -
Maker	All Sensors	All Sensors	All Sensors
RoHS	no	no	no
Configuration	Single	Single	Single
Transistor polarity	NPN	NPN	NPN
Installation style	Through Hole	Through Hole	Through Hole
Package/box	TO-92	TO-92	TO-92
Maximum operating frequency	600 MHz (Min)	600 MHz (Min)	600 MHz (Min)
Collector-emitter maximum voltage VCEO	15 V	15 V	15 V
Power dissipation	300 mW	300 mW	300 mW
Maximum operating temperature	+ 175 C	+ 175 C	+ 175 C
Minimum operating temperature	- 55 C	- 55 C	- 55 C
Emitter-Base voltage VEBO	-	3 V	3 V
Maximum DC collector current	-	0.5 A	0.5 A

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