SOT323 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 1 – DECEMBER 1998
FEATURES
*
Avalanche mode operation
*
50A Peak avalanche current
*
Low inductance packaging
APPLICATIONS
*
Laser LED drivers
*
Fast edge generation
*
High speed pulse generators
PARTMARKING DETAIL - T13
ZUMT413
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (25ns Pulse Width)
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
VALUE
150
50
6
100
50
330
-55 to +150
UNIT
V
V
V
mA
A
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
SYMBOL
V
(BR)CES
V
CEO(sus)
V
(BR)EBO
MIN.
150
50
6
0.1
0.1
0.15
0.8
22
31
50
TYP.
MAX.
UNIT
V
V
V
µA
µA
V
V
A
A
CONDITIONS.
I
C
=100µA
I
C
=10mA
I
E
=100µA
V
CB
=120V
V
EB
=4V
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
C
=110V, C
CE
=4.7nF*
V
C
=130V, C
CE
=4.7nF*
I
C
=10mA, V
CE
=10V
Collector Cut-Off Current I
CBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Current in Second
Breakdown (Pulsed)
Static Forward Current
Transfer Ratio
I
EBO
V
CE(sat)
V
BE(sat)
I
USB
h
FE
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I
(USB)
monitor
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
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