BA782S-V, BA783S-V
Vishay Semiconductors
Band Switching Diodes
FEATURES
• These diodes are also available in SOD-123
case with the type designations BA782-V and
BA783-V
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20145
DESCRIPTION
Silicon epitaxial planar diode switches
For electric bandswitching in radio and TV tuners in the
frequency range of (50 to 1000) MHz. The dynamic forward
resistance is constant and very small over a wide range of
frequency and forward current. The reverse capacitance is
also small and largely independent of the reverse voltage.
MECHANICAL DATA
Case:
SOD-323
Weight:
approx. 4.3 mg
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BA782S-V
BA783S-V
ORDERING CODE
BA782S-V-GS18 or BA782S-V-GS08
BA783S-V-GS18 or BA783S-V-GS08
TYPE MARKING
R2
R3
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward continuous current
TEST CONDITIONS
SYMBOL
V
R
I
F
VALUE
35
100
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction temperature
Storage temperature range
TEST CONDITION
SYMBOL
T
j
T
stg
VALUE
125
- 55 to + 150
UNIT
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
TEST CONDITION
I
F
= 100 mA
V
R
= 20 V
f = 1 MHz, V
R
= 1 V
f = 1 MHz, V
R
= 3 V
f = (50 to 1000) MHz, I
F
= 3 mA
Dynamic forward resistance
f = (50 to 1000) MHz, I
F
= 10 mA
Series inductance across case
BA782S-V
BA783S-V
BA782S-V
BA783S-V
BA782S-V
BA783S-V
PART
SYMBOL
V
F
I
R
C
D1
C
D2
C
D2
r
f1
r
f1
r
f2
r
f2
L
S
2.5
MIN.
TYP.
MAX.
1000
50
1.5
1.25
1.2
0.7
1.2
0.5
0.9
UNIT
mV
nA
pF
pF
pF
Ω
Ω
Ω
Ω
nH
Document Number: 85709
Rev. 1.6, 05-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BA782S-V, BA783S-V
Vishay Semiconductors
Band Switching Diodes
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
r
f
- Dynamic Forward Resistance (Ω)
2.0
10
T
amb
= 25 °C
BA782S-V, BA783S-V
1 kHz
C
D
- Diode Capacitance (pF)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1
T
j
= 25 °C
f = 1 MHz
1
BA783S-V
100 MHz
BA782S-V
100 MHz
0.1
1
10
100
10
100
20330
18798
V
R
- Reverse
Voltage
(V)
Fig. 1 - Diode Capacitance
I
F
- Forward Current (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-323
1.15 (0.045)
0.8 (0.031)
0.2 (0.008)
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
Cathode bar
0.40 (0.016)
0.20 (0.008)
2.85 (0.112)
2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
1.5 (0.059)
1.1 (0.043)
0° to 8
°
0.1 (0.004) max.
0.15 (0.006)
0.10 (0.004)
0.6 (0.024)
1.6 (0.063)
17443
Document Number: 85709
Rev. 1.6, 05-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
www.vishay.com
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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