SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 NOVEMBER 1995
COMPLEMENTARY TYPES
7
BSP43 - BSP33
BSP41 - BSP31
PARTMARKING DETAIL
DEVICE TYPE IN FULL
C
BSP41
BSP43
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
BSP43
Breakdown Voltage BSP41
Collector-Emitter
BSP43
Breakdown Voltage BSP41
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Collector Capacitance
Emitter Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
C
c
C
e
f
T
T
on
T
off
100
250
1000
30
100
50
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
TOT
T
j
:T
stg
MIN.
90
70
80
60
5
100
50
0.25
0.5
1.0
1.2
300
12
90
pF
pF
MHz
ns
ns
MAX.
BSP41
70
60
5
2
1
100
2
-55 to +150
UNIT
V
V
V
µ
A
BSP43
90
80
UNIT
V
V
V
A
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA *
I
E
=10
µ
A
V
CB
=60V
V
CB
=60V, Tamb =125°C
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=100
µ
A, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
V
CB
=10V, f=1MHz
V
EB
=0.5V, f=1MHz
I
C
=50mA, V
CE
=10V
f =35MHz
V
CC
=20V, I
C
=100mA
I
B1
=I
B2
=5mA
nA
V
V
V
V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMT493 datasheet.
3 - 64
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