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DZ1070N20K

Description
Rectifier Diode, 1 Phase, 1 Element, 1070A, 2000V V(RRM), Silicon, MODULE-2
CategoryDiscrete semiconductor    diode   
File Size225KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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DZ1070N20K Overview

Rectifier Diode, 1 Phase, 1 Element, 1070A, 2000V V(RRM), Silicon, MODULE-2

DZ1070N20K Parametric

Parameter NameAttribute value
MakerInfineon
Parts packaging codeMODULE
package instructionMODULE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.52 V
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current35000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1070 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage2000 V
Maximum reverse current150000 µA
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Base Number Matches1
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DZ1070N
DZ1070N
Elektrische Eigenschaften / Electrical properties
Kenndaten
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
Elektrische Eigenschaften
T
Thermische Eigenschaften
vj
= -40°C... T
vj max
V
RRM
V
RSM
I
FRMSM
T
vj
= +25°C... T
vj max
1800
2200
2600
1900
2300
2700
2000
2400
2800
2100
2500
2900
1700
V
V
V
V
V
V
A
1)
T
C
= 100
°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FAVM
I
FSM
I²t
1070 A
41.000 A
35.000 A
8.405.000 A²s
6.125.000 A²s
T
vj
= T
vj max
, i
F
= 3400 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
, v
R
= V
RRM
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
v
F
V
(TO)
r
T
i
R
V
ISOL
max.
1,52 V
0,8 V
0,17 mΩ
max.
150 mA
3,6 kV
3,0 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module,
Θ
= 180° sin R
thJC
pro Modul / per Module, DC
max.
max.
0,0450 °C/W
0,0435 °C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
pro Modul / per Module
R
thCH
T
vj max
T
c op
T
stg
max.
0,01 °C/W
160 °C
- 40...+150 °C
- 40...+150 °C
1) 2800V auf Anfrage/ 2800V on request
prepared by: C. Drilling
approved by: M. Leifeld
date of publication:
revision:
06.05.03
1
BIP AC / 00-09-28, K.-A. Rüther
A21/00
Seite/page
1/9

DZ1070N20K Related Products

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Description Rectifier Diode, 1 Phase, 1 Element, 1070A, 2000V V(RRM), Silicon, MODULE-2 Rectifier Diode, 1 Phase, 1 Element, 1070A, 2600V V(RRM), Silicon, MODULE-2 Rectifier Diode, 1 Phase, 1 Element, 1070A, 2400V V(RRM), Silicon, MODULE-2
Maker Infineon Infineon Infineon
Parts packaging code MODULE MODULE MODULE
package instruction MODULE-2 MODULE-2 R-XUFM-X2
Contacts 2 2 2
Reach Compliance Code compliant compliant unknown
ECCN code EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.52 V 1.52 V 1.52 V
JESD-30 code R-XUFM-X2 R-XUFM-X2 R-XUFM-X2
Maximum non-repetitive peak forward current 35000 A 35000 A 35000 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum output current 1070 A 1070 A 1070 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 2000 V 2600 V 2400 V
Maximum reverse current 150000 µA 150000 µA 150000 µA
surface mount NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER
Base Number Matches 1 1 1
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