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FJA4310YTU

Description
bipolar power npn Si transistor epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size197KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

FJA4310YTU Overview

bipolar power npn Si transistor epitaxial

FJA4310YTU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Codeunknown
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)90
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
FJA4310 — NPN Epitaxial Silicon Transistor
October 2008
FJA4310
NPN Epitaxial Silicon Transistor
Audio Power Amplifier
High Current Capability : I
C
=10A
High Power Dissipation
Wide S.O.A
Complement to FJA4210
1
TO-3P
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Ratings
200
140
6
10
1.5
100
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*
DC
Test Condition
I
C
=5mA, I
E
=0
I
C
=50mA, R
BE
I
E
=5mA, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=0.5A
V
CB
=10V, f=1MHz
Min.
200
140
6
Typ.
Max.
Units
V
V
V
10
10
50
250
30
180
0.5
mA
mA
V
pF
MHz
Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Product
f
T
Current Gain Bandwidth
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
V
CE
=5V, I
C
=1A
h
FE
Classification
Classification
h
FE
R
50 ~ 100
O
70 ~ 140
Y
90 ~ 180
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
1
www.fairchildsemi.com
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