600 V
IL4216
700 V
IL4217
800 V
IL4218
Triac Driver Optocoupler
FEATURES
• High Input Sensitivity
I
FT
=1.3 mA
• 600/700/800 V Blocking Voltage
• 300 mA On-State Current
• High Static dv/dt 10,000 V/µsec., typical
• Inverse Parallel SCRs Provide Commutating
dv/dt >10 kV/µsec
• Very Low Leakage <10 µA
• Isolation Test Voltage from Double Molded
Package 5300 V
RMS
• Package, 6-Pin DIP
• Underwriters Lab File #E52744
DESCRIPTION
The IL421x consists of an AlGaAs IRLED optically
coupled to a pair of photosensitive non-zero crossing
SCR chips and are connected inversely parallel to
form a TRIAC. These three semiconductors are
assembled in a six pin 0.3 inch dual in-line package,
using high insulation double molded, over/under
leadframe construction.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR pre-
driver resulting in an LED trigger current of less than
1.3 mA (DC).
The IL421x uses two discrete SCRs resulting in a
commutating dv/dt of greater than 10 kV/
µ
s. The use
of a proprietary
dv/dt clamp
results in a static dv/dt of
greater than 10 kV/
µ
s. This clamp circuit has a MOS-
FET that is enhanced when high dv/dt spikes occur
between MT1 and MT2 of the TRIAC. The FET clamps
the base of the phototransistor when conducting, dis-
abling the internal SCR predriver.
The blocking voltage of up to 800 V permits control of
off-line voltages up to 240 VAC, with a safety factor of
more than two, and is sufficient for as much as 380
VAC. Current handling capability is up to 300 mA
RMS, continuous at 25°C.
The IL421x isolates low-voltage logic from 120, 240,
and 380 VAC lines to control resistive inductive, or
capacitive loads including motors solenoids, high
current thyristors or TRIAC and relays.
Applications include solid-state relays, industrial con-
trols, office equipment, and consumer appliances.
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
pin one ID
LED 1
Anode
LED
Cathode 2
NC 3
6 Triac
MT2
Substrate
5 do not
connect
4 Triac
MT1
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.300 (7.62)
typ.
.114 (2.90)
.130 (3.0)
Maximum Ratings
Emitter
Reverse Voltage .................................................................................6.0 V
Forward Current............................................................................... 60 mA
Surge Current .................................................................................... 2.5 A
Power Dissipation..........................................................................100 mW
Derate Linearly from 25°C .......................................................1.33 mW/°C
Thermal Resistance.....................................................................750 °C/W
Detector
Peak Off-State Voltage
IL4216 .............................................................................................600 V
IL4217 .............................................................................................700 V
IL4218 .............................................................................................800 V
RMS On-State Current ................................................................... 300 mA
Single Cycle Surge............................................................................ 3.0 A
Total Power Dissipation .................................................................500 mW
Derate Linearly from 25°C .........................................................6.6 mW/°C
Thermal Resistance......................................................................150°C/W
Package
Lead Soldering Temperature ..............................................260°C/5.0 sec.
Creepage Distance .......................................................................
≥
7.0 mm
Clearance ......................................................................................
≥
7.0 mm
Storage Temperature .......................................................–55°C to +150°C
Operating Temperature ...................................................–55°C to +100°C
Isolation Test Voltage................................................................ 5300 V
RMS
Isolation Resistance
V
IO
=500 V,
T
A
=25°C ....................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100°C ..................................................................
≥
10
11
Ω
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
1
January 19, 2000-13
Power Factor Considerations
A snubber isn’t needed to eliminate false operation of the
TRIAC driver because of the IL411’s high static and commutat-
ing dv/dt with loads between 1 and 0.8 power factors. When
inductive loads with power factors less than 0.8 are being
driven, include a RC snubber or a single capacitor directly
across the device to damp the peak commutating dv/dt spike.
Normally a commutating dv/dt causes a turning-off device to
stay on due to the stored energy remaining in the turning-off
device.
But in the case of a zero voltage crossing optotriac, the com-
mutating dv/dt spikes can inhibit one half of the TRIAC from
turning on. If the spike potential exceeds the inhibit voltage of
the zero cross detection circuit, half of the TRIAC will be held-
off and not turn-on. This hold-off condition can be eliminated
by using a snubber or capacitor placed directly across the
optotriac as shown in Figure 7. Note that the value of the
capacitor increases as a function of the load current.
The hold-off condition also can be eliminated by providing a
higher level of LED drive current. The higher LED drive pro-
vides a larger photocurrent which causer. the phototransistor
to turn-on before the commutating spike has activated the zero
cross network. Figure 8 shows the relationship of the LED drive
for power factors of less than 1.0. The curve shows that if a
device requires 1.5 mA for a resistive load, then 1.8 times (2.7
mA) that amount would be required to control an inductive
load whose power factor is less than 0.3.
Figure 7. Shunt capacitance versus load current
versus power factor
Figure 8. Normalized LED trigger current versus
power factor
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
4
IL4216/4217/4218
January 19, 2000-13
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