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ZTX752

Description
Digital transistor -
Categorysemiconductor    Discrete semiconductor   
File Size80KB,3 Pages
ManufacturerAll Sensors
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ZTX752 Overview

Digital transistor -

ZTX752 Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle
Transistor polarityPNP
Installation styleThrough Hole
Package/boxTO-92
Maximum operating frequency140 MHz (Typ)
Collector-emitter maximum voltage VCEO80 V
Collector continuous current2 A
Power dissipation1000 mW
Maximum operating temperature+ 200 C
Minimum operating temperature- 55 C
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
ZTX752
ZTX753
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX752
-100
-80
-5
-6
-2
1
5.7
E-Line
TO92 Compatible
ZTX753
-120
-100
UNIT
V
V
V
A
A
W
mW/°C
°C
Operating and Storage Temperature Range
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
ZTX752
ZTX753
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
-100
-80
-5
-0.1
-10
I
EBO
-0.1
-0.17 -0.3
-0.30 -0.5
-0.9
-0.8
-1.25
-1
-120
-100
-5
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-80V
V
CB
=-100V
V
CB
=-80V,
T
amb
=100°C
V
CB
=-100V,
T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-100mA*
IC=-1A, V
CE
=-2V*
-0.1
-10
-0.1
-0.17 -0.3
-0.30 -0.5
-0.9
-0.8
Emitter Cut-Off
Current
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
BE(on)
V
V
-1.25 V
-1
V
3-260

ZTX752 Related Products

ZTX752 ZTX752STOA ZTX752STOB ZTX752STZ
Description Digital transistor - Bipolar small signal - Bipolar small signal - Bipolar small signal -
Maker All Sensors All Sensors All Sensors All Sensors
RoHS no no no no
Configuration Single Single Single Single
Transistor polarity PNP PNP PNP PNP
Installation style Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92
Maximum operating frequency 140 MHz (Typ) 140 MHz (Typ) 140 MHz (Typ) 140 MHz (Typ)
Collector-emitter maximum voltage VCEO 80 V 80 V 80 V 80 V
Power dissipation 1000 mW 1000 mW 1000 mW 1000 mW
Maximum operating temperature + 200 C + 200 C + 200 C + 200 C
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C
Emitter-Base voltage VEBO - 5 V 5 V 5 V
Maximum DC collector current - 2 A 2 A 2 A
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