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BDW73C

Description
Darlington transistor 80w 8A npn
CategoryDiscrete semiconductor    The transistor   
File Size63KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Download Datasheet Parametric Compare View All

BDW73C Overview

Darlington transistor 80w 8A npn

BDW73C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBourns
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
BDW73, BDW73A, BDW73B, BDW73C, BDW73D
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDW74, BDW74A, BDW74B, BDW74C and
BDW74D
80 W at 25°C Case Temperature
B
TO-220 PACKAGE
(TOP VIEW)
1
2
3
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 3 A
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDW73
BDW73A
Collector-base voltage (I
E
= 0)
BDW73B
BDW73C
BDW73D
BDW73
BDW73A
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW73B
BDW73C
BDW73D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
A
2
SYMBOL
VALUE
45
60
UNIT
V
CBO
80
100
120
45
60
V
V
CEO
80
100
120
5
8
0.3
80
2
75
-65 to +150
-65 to +150
-65 to +150
V
V
A
A
W
W
mJ
°C
°C
°C
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BDW73C Related Products

BDW73C BDW73A BDW73B
Description Darlington transistor 80w 8A npn Darlington transistor 80w 8A npn Darlington transistor 80w 8A npn
Is it Rohs certified? incompatible incompatible incompatible
Maker Bourns Bourns Bourns
Parts packaging code TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknown
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 8 A 8 A 8 A
Collector-emitter maximum voltage 100 V 60 V 80 V
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 100 100 100
JEDEC-95 code TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON
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