NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
HIGH GAIN:
|S
21E
|
2
= 9.0 dB TYP at 1 GHz
HIGH COLLECTOR CURRENT:
100mA
0.65
2.0
±
0.2
1
UPA801T
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
(Top View)
2.1
±
0.1
1.25
±
0.1
6
0.2 (All Leads)
DESCRIPTION
NEC's UPA801T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device ideally
suited for pager and other hand-held wireless applications.
1.3
2
5
3
4
0.9
±
0.1
0.7
0.15
- 0.05
PIN OUT
0 ~ 0.1
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
+0.10
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE1
f
T
Cre
2
|S
21E
|
2
NF
h
FE1
/h
FE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
or Q
2
h
FE2
= Larger Value pf Q
1
or Q
2
GHz
pF
dB
dB
0.85
7
UNITS
µA
µA
70
3.0
120
4.5
0.7
9
1.2
2.5
1.5
MIN
UPA801T
S06
TYP
MAX
1.0
1.0
250
Notes: 1.Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA801T-T1, 3K per reel.
.
California Eastern Laboratories
UPA801T
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
mW
°C
°C
RATINGS
20
12
3
100
110
200
150
-65 to +150
T
J
T
STG
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
20
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
Total Power Dissipation, P
T
(mW)
em
en
ts
Pe
in
rE
lem
To
t
al
en
Collector Current, I
C
(mA)
200
2
El
t
10
100
0
50
100
150
0
0.5
1.0
Ambient Temperature, T
A
(°C)
Base to Emitter Voltage, V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
l
B
=160
µA
140
µA
200
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
Collector Current, I
C
(mA)
120
µA
15
100
µA
80
µA
10
60
µA
40
µA
5
20
µA
DC Current Gain, h
FE
10
20
100
50
20
10
0
5
0.5
1
5
10
50
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
UPA801T
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
20
15
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
Gain Bandwidth Product, f
T
(GHz)
10
Insertion Power Gain, IS
21e
I
2
(dB)
V
CE
= 3 V
f = 1 GHz
V
CE
= 3 V
f = 1 GHz
10
5
5
2
1
0.5
1
5
10
50
0
0.5
1
5
10
50
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
6
24
V
CE
= 3 V
f = 1 GHz
INSERTION POWER GAIN vs.
FREQUENCY
V
CE
= 3 V
lc = 7 mA
20
Insertion Power Gain, IS
21e
I
2
(dB)
Noise Figure (dB)
4
16
12
2
8
4
0
0.5
1.0
5.0
10
50
100
0
0.1
0.2
0.5
1.0
2.0
5.0
Collector Current, I
C
(mA)
Frequency, f (GHz)
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5.0
f = 1 MHz
Feed Back Capacitance, C
RE
(pF)
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage, V
CB
(V)
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